Applied Physics A

, Volume 48, Issue 6, pp 509–515 | Cite as

Model calculations of diffusion limited trapping dynamics in quantum well laser structures

  • A. Weller
  • P. Thomas
  • J. Feldmann
  • G. Peter
  • E. O. Göbel
Solids and Materials


We present a phenomenological theoretical model to treat the trapping of carriers into quantum wells of semiconductor laser structures. We consider explicitely the transport within the barrier layers by solving the continuity equation with the appropriate boundary conditions taking into account surface recombination, radiative and nonradiative recombination in the barrier layers and trapping of carriers into the quantum wells. The experimental findings for the trapping dynamics in GaAs/AlGaAs quantum well structures can be consistently interpreted by the model calculations.


73.20.Dx 78.55.Cr 78.47.+p 


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Copyright information

© Springer-Verlag 1989

Authors and Affiliations

  • A. Weller
    • 1
  • P. Thomas
    • 1
  • J. Feldmann
    • 1
  • G. Peter
    • 1
  • E. O. Göbel
    • 1
  1. 1.Fachbereich PhysikPhilipps UniversitätMarburgFed. Rep. Germany

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