Hall mobility of evaporated InAs films prepared at different temperatures
Contributed Papers
Received:
Accepted:
Abstract
The behaviour of the Hall mobilityμH and the carrier concentrationn have been investigated on InAs films as a function of thickness, substrate temperature and annealing treatment. While the Hall mobility showed an increasing trend with substrate temperature and thickness for both as-deposited and annealed films, the carrier concentration for asdeposited films showed a maximum at a particular substrate temperature range while that for annealed films showed a monotonous decreasing behaviour.
PACS
73.60Preview
Unable to display preview. Download preview PDF.
References
- 1.C. Paparoditis: J. Phys.25, 226 (1964)Google Scholar
- 2.A. Goswami, B.V. Rao, P. Singh: Ind. J. Pure Appl. Phys.12, 17 (1974)Google Scholar
- 3.N. Godinho, A. Brunnschweiler: Solid State Electron.13, 47 (1970)Google Scholar
- 4.R.P. Howson, V. Malina: J. Phys. D3, 854 (1970)Google Scholar
- 5.H.E. Kunig: J. Vac. Sci. Technol.7, 100 (1970)Google Scholar
- 6.K.N. Jha, A.V. Korgaonkar: Thin Solid Films9, 133 (1972)Google Scholar
- 7.J. Szczyrbowski, A. Czapla, M. Jachimowski: Thin Solid Films42, 193 (1977)Google Scholar
- 8.V.A. Vlasov, S.A. Semiletov: Sov. Phys. Cryst.12, 645 (1968)Google Scholar
- 9.M. Epstein: J. Appl. Phys.36, 2590 (1965)Google Scholar
- 10.V.A. Vlasov, S.A. Semiletov: Sov. Phys. Cryst.12, 761 (1968)Google Scholar
- 11.J.L. Richards: InThe Use of Thin Films in Physical Investigations, ed. by J.C. Anderson (Academic Press, New York 1966) p. 71Google Scholar
- 12.A.K. Sharma, P. Jayarama Reddy: Phys. Stat. Sol. (a) (in press)Google Scholar
- 13.A.K. Sharma, P. Jayarama Reddy: J. Non-Cryst. Solids41, 13 (1980)Google Scholar
- 14.A.K. Sharma, P. Jayarama Reddy: Czech. J. Phys. (in press)Google Scholar
Copyright information
© Springer-Verlag 1984