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Reduction of the threshold temperature sensitivity of 1.55 μm InGaAsP lasers by subnanosecond optical excitation

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In GaAsP lasers operating at 1.5 to 1.6 μm were pumped optically with a pulsed 1.06 μm source. The temperature dependence of the pump energy at laser threshold has been measured for temperatures from 170 to 330 K. Pump pulse widths of 300 ns and 150–300 ps were employed, long and short compared to the carrier life-time in the laser material. Over the high-temperature range of 260 to 330 K short pulse excitation gives a considerable reduction of the threshold temperature sensitivity with a characteristic temperatureT 0 =85 K compared to T 0 h =45 K for long-pulse excitation. This is in qualitative agreement with previous results on electrically excited lasers although the temperature sensitivity of the optically excited lasers is larger. At temperatures between 170 to 260 K no reduction of the temperature sensitivity was observed.

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Eichler, H.J. Reduction of the threshold temperature sensitivity of 1.55 μm InGaAsP lasers by subnanosecond optical excitation. Appl. Phys. A 39, 273–276 (1986). https://doi.org/10.1007/BF00617272

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