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Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy

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Abstract

Thermal donors are generated in oxygen-rich silicon by an anneal at 450 °C. The energy-levels of these donors are investigated by capacitance transient spectroscopy (DLTS) and the Hall effect. A level at 125 meV below the conduction band observed with DLTS exhibits a strong dependence on the electric field (Poole-Frenkel effect). Evaluation with a novel model for the Poole-Frenkel effect leads to a corrected zero-field energy of 200 meV for this level. The Hall effect indicates two thermal donors at 57 and 120 meV below the conduction band; both centers cannot be observed with our capacitance-DLTS method due to the Poole-Frenkel energy reduction by 70 meV±10 meV. The 45 meV current-DLTS level [1,2] is shown to correlate with the 120 meV Hall level.

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Keller, W., Wünstel, K. Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy. Appl. Phys. A 31, 9–12 (1983). https://doi.org/10.1007/BF00617181

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PACS

  • 61.70.-r
  • 71.55.-i