Thermal donors are generated in oxygen-rich silicon by an anneal at 450 °C. The energy-levels of these donors are investigated by capacitance transient spectroscopy (DLTS) and the Hall effect. A level at 125 meV below the conduction band observed with DLTS exhibits a strong dependence on the electric field (Poole-Frenkel effect). Evaluation with a novel model for the Poole-Frenkel effect leads to a corrected zero-field energy of 200 meV for this level. The Hall effect indicates two thermal donors at 57 and 120 meV below the conduction band; both centers cannot be observed with our capacitance-DLTS method due to the Poole-Frenkel energy reduction by 70 meV±10 meV. The 45 meV current-DLTS level [1,2] is shown to correlate with the 120 meV Hall level.
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L.C. Kimerling, J.L. Benton: Appl. Phys. Lett.39, 410–412 (1981)
J.L. Benton, L.C. Kimerling, M. Stavola: Proc. 12th Int. Conf. Defects in Semiconductors, Amsterdam (1982) (to be published)
W. Kaiser, H.L. Frisch, H. Reiss: Phys. Rev.112, 1546–1554 (1958)
P. Gaworzewski, H. Riemann: Krist. Techn.12, 189–196 (1977)
V. Cazcarra, P. Zunino: J. Appl. Phys.51, 4206–4211 (1980)
P. Gaworzewski, K. Schmalz: Phys. Status Solidi (a)55, 699–707 (1979)
J. Frenkel: Phys. Rev.54, 647–648 (1938)
J.L. Hartke: J. Appl. Phys.39, 4871–4873 (1968)
J.L. Pautrat: Solid State Electron.23, 661–670 (1980)
W. Keller, G. Pensel, M. Schulz: Proc. 12th Conf. Defects in Semiconductors, Amsterdam (1982) (to be published)
L.J. van der Pauw: Philips Res. Rep.13, 1–9 (1958)
G.L. Miller, D.V. Lang, L.C. Kimerling: Annual Rev. Mater. Sci.7, 377–383 (1977)
D.V. Lang: InThermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics Appl. Phys.37 (Springer, Berlin, Heidelberg, New York 1979) Chap. 3
R. Oeder, P. Wagner: Proc. 1982 Annual Meeting Materials Research Society (to be published)
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Keller, W., Wünstel, K. Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy. Appl. Phys. A 31, 9–12 (1983). https://doi.org/10.1007/BF00617181