Applied Physics A

, Volume 35, Issue 3, pp 189–192 | Cite as

The role of the interfacial SiOx layer in SnO2/n-Si photocells

  • W. Badawy
  • K. Doblhofer
Contributed Papers
Received:
Accepted:

Abstract

It is proposed that the charge transport across the SiO x layer at the interface SnO2/Si proceeds by a hopping mechanism. During heat treatment of the photovoltaic cells, in air, chemical reactions occur with O2/H2O, which lead to a drastic reduction of the density of hopping sites near the Si conduction band edge. The SiO x hopping sites of energy near the valence band edge are less affected by these chemical reactions. Thus, photogenerated holes can still pass the barrier while the dark current flow is strongly inhibited.

PACS

68.00 73.40 86.30 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    D.L. Pulfrey: IEEE Trans. ED-25, 1308 (1978)Google Scholar
  2. 2.
    S.J. Fonash:Solar Cell Device Physics (Academic Press, New-York 1981)Google Scholar
  3. 3.
    W. Badawy, F. Decker, K. Doblhofer: Solar Eng. Mater.8, 363 (1983)Google Scholar
  4. 4.
    H.P. Maruska, A.K. Gosh, D.J. Eustace, T. Feng: J. Appl. Phys.54, 2489 (1983)Google Scholar
  5. 5.
    T.R. Nash, R.L. Anderson: IEEE Trans. ED-24, 468 (1977)Google Scholar
  6. 6.
    S.M. Goodnick, J.F. Wagner, C.W. Wilmssen: J. Appl. Phys.51, 527 (1980)Google Scholar
  7. 7.
    O.P. Agnihotri, B.K. Gupta:Solar Selective Surfaces (Wiley, New York 1981) Chap. 3Google Scholar
  8. 8.
    J. Sewchun, J. DuBow, A. Myszkowski, R. Singh: J. Appl. Phys.49, 855 (1978)Google Scholar
  9. 9.
    K.K. Ng, H.C. Card: J. Appl. Phys.51, 2153 (1980)Google Scholar
  10. 10.
    H. Overhof: Hopping Conductivity in Disordered Solids inFestkörperprobleme 16, 239 (Vieweg, Braunschweig 1976)Google Scholar
  11. 11.
    S. Kar, S. Ashok, S.J. Fonash: J. Appl. Phys.51, 3417 (1980)Google Scholar
  12. 12.
    R. Williams: J. Vac. Sci. Technol.14, 1106 (1977)Google Scholar
  13. 13.
    E.E. Aspnes, J.B. Theeten: J. Electrochem. Soc.127, 1359 (1980)Google Scholar
  14. 14.
    J.P. Ponpon, R. Stuck, P. Siffert: In Proc. 12th IEEE Photo. Spec. Conf. (1976) p. 900Google Scholar
  15. 15.
    M. Schulz: InInsulating Films on Semiconductors (1979) (Institute of Physics, Bristol 1980) pp. 75–80Google Scholar
  16. 16.
    Dieter Schmeisser: Private communicationGoogle Scholar
  17. 17.
    M.A. Green: Appl. Phys. Lett.33, 178 (1978)Google Scholar

Copyright information

© Springer-Verlag 1984

Authors and Affiliations

  • W. Badawy
    • 1
  • K. Doblhofer
    • 1
  1. 1.Fritz-Haber-Institut der Max-Planck-GesellschaftBerlin 33

Personalised recommendations