Applied Physics A

, Volume 41, Issue 3, pp 175–178

Photoluminescence detection of impurities introduced in silicon by dry etching processes

  • J. Weber
  • R. J. Davis
  • H. -U. Habermeier
  • W. D. Sawyer
  • M. Singh
Solids and Materials

DOI: 10.1007/BF00616836

Cite this article as:
Weber, J., Davis, R.J., Habermeier, H.U. et al. Appl. Phys. A (1986) 41: 175. doi:10.1007/BF00616836

Abstract

We report on a photoluminescence study of silicon samples subjected to different dry etching processes. Several luminescence lines, known from defects produced by high-energy irradiation, manifest damage of the crystalline material. Noble gas ion beam etching (using Ne+, Ar+, Kr+, and Xe+) with ion energies as low as 400 eV produces characteristic luminescence lines which correspond to defects within a 200–300 Å thick surface layer. Incorporation of carbon during CF4 reactive ion etching produces the familiar G-line defect. The G-line photoluminescence intensity in our samples is directly correlated with the substitutional carbon concentration, as determined by infrared absorption measurements before the etch process; we therefore suggest that a simple method to determine the substitutional carbon concentration in a crystalline silicon sample is a standard dry etching process and a comparison of the resulting G-line photoluminescence intensity to a calibrated sample. The sensitivity of this method seems to be better than 1014 carbon atoms/cm3.

PACS

78.55DS 61.80Jh 71.35 +z 

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Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • J. Weber
    • 1
  • R. J. Davis
    • 1
  • H. -U. Habermeier
    • 1
  • W. D. Sawyer
    • 1
  • M. Singh
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. Germany
  2. 2.School of Applied and Engineering Physics and The National Submicron FacilityCornell UniversityIthacaUSA

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