Applied Physics A

, Volume 42, Issue 4, pp 263–267 | Cite as

Annealing behaviour of implanted nitrogen in bulk and evaporated Ni

  • R. Lappalainen
  • A. Anttila
Solids and Materials
Received:
Accepted:

Abstract

The diffusion coefficients of nitrogen in N-implanted polycrystalline Ni have been deduced. Both bulk and Ni-evaporated samples implanted with nitrogen were annealed at 150–500° C. The nitrogen profiles were probed using the nuclear resonance broadening technique. The value of 0.99±0.12 eV for the activation energy and (3.0 −2.8 +40 )×10−6 cm2/s for the frequency factor were obtained for implanted N in bulk Ni. The solubilities for both the bulk and evaporated Ni samples are given. In evaporated Ni nitrogen migration is enhanced due to the defects arising during evaporation.

PACS

66.30.Jt 61.70.Tm 
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Copyright information

© Springer-Verlag 1987

Authors and Affiliations

  • R. Lappalainen
    • 1
  • A. Anttila
    • 1
  1. 1.Department of PhysicsUniversity of HelsinkiHelsinkiFinland

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