Positron-annihilation technique has been used to study the recovery of defects in α-irradiated n-type GaAs specimens. The Doppler-broadened lineshape parameterS, shows a smooth recovery of defects over the temperature region 120–600° C. The lifetime measurements have also been performed to characterise the types of defects present. The positron mean lifetimeτ m follows the behaviour of the “S” parameter, indicating a rather complex defect structure recovery. The variation in the defect specific parameter,R, with temperature is also consistent with these observations.
This is a preview of subscription content, log in to check access.
Buy single article
Instant access to the full article PDF.
Price includes VAT for USA
Subscribe to journal
Immediate online access to all issues from 2019. Subscription will auto renew annually.
This is the net price. Taxes to be calculated in checkout.
H.Y. Fan: 7th Intern. Conf. on the Physics of Semiconductors (Radiation damage in Semiconductors), Paris-Royaumont (1964) p. 1
L.W. Aukerman, R.D. Graft: Phys. Rev.127, 1576 (1962)
T.I. Kolchenko, V.M. Lomako: Radiat. Eff.37, 67 (1978)
A.D. Pogrebnyak, V.S. Lopation, R.G. Ziyakaev, S.V. Vorobiev: Phys. Lett.97A, 362 (1983)
S.E. Bochkarev, L.A. Ivanyutin, V.P. Komlev, E.P. Prokopev, V.M. Samollov, V.G. Pirsor, Yu.V. Funtikov: Sov. Phys. Solid State23, 118 (1981)
L.J. Cheng, J.P. Karins, J.W. Corbett: J. Appl. Phys.50, 2962 (1979)
K.P. Aref'ev, V.N. Brudnyi, D.L. Budnitskii, S.A. Vorob'ev, A.A. Tsoi: Sov. Phys. Semicond.13, 669 (1979)
D. Pons, P.M. Mooney, J.E. Bourgoin: J. Appl. Phys.51, 2038 (1981)
D.V. Lang, R.A. Logan, Z.C. Kimerling: Phys. Rev. B15, 4874 (1977)
D. Pons, J. Bourgoin: Phys. Rev. Lett.47, 1293 (1981)
D. Pons, A. Mircea, J. Bourgoin: J. Appl. Phys.51, 4150 (1980)
D. Pons: InDefects and Radiation Effects in Semiconductors (1980),Inst. Phys. Conf. Ser. N-59, 269 (1981)
D. Stievenard, J.E. Bourgoin, D. Pons: Physica116B, 394 (1983)
P. Kirkegaard, M. Eldrup: Comp. Phys. Commun.7, 401 (1974), Riso report (1979)
A. Sen Gupta, S.V. Naidu, R.K. Bhandari, P. Sen: Phys. Lett.104A, 117 (1984)
W. Triftshäuser: Phys. Rev. B12, 4634 (1975)
G. Dlubek, O. Brummer, F. Plazaola, P. Hautojärvi: J. Phys. C (to be published)
S. Dannefaer, B. Hogg, D. Kerr: Phys. Rev. B30, 3355 (1984)
A. Mircea, D. Bois: InDefects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser. (1978)
R.N. West: Adv. Phys.22, 263 (1977)
J.W. Cleland, R.F. Bass, J.H. Crawford, Jr.: In [Ref. 1, p. 401]
F.H. Eisen: In [Ref. 1, p. 367]
About this article
Cite this article
Sen Gupta, A., Naidu, S.V. & Sen, P. Annealing study of defects in alpha-irradiated n-type GaAs by positron-annihilation technique. Appl. Phys. A 40, 95–99 (1986). https://doi.org/10.1007/BF00616484