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Annealing study of defects in alpha-irradiated n-type GaAs by positron-annihilation technique

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Abstract

Positron-annihilation technique has been used to study the recovery of defects in α-irradiated n-type GaAs specimens. The Doppler-broadened lineshape parameterS, shows a smooth recovery of defects over the temperature region 120–600° C. The lifetime measurements have also been performed to characterise the types of defects present. The positron mean lifetimeτ m follows the behaviour of the “S” parameter, indicating a rather complex defect structure recovery. The variation in the defect specific parameter,R, with temperature is also consistent with these observations.

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Sen Gupta, A., Naidu, S.V. & Sen, P. Annealing study of defects in alpha-irradiated n-type GaAs by positron-annihilation technique. Appl. Phys. A 40, 95–99 (1986). https://doi.org/10.1007/BF00616484

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PACS

  • 61.80
  • 78.70B