Analysis of the ZnSe-oxide structures formed by anodic oxidation has been performed. Electrooptical properties were analysed as a function of parameters of anodic oxidation by means of the electroluminescence method. Surface properties of ZnSe with a ZnO layer were investigated by using an Auger depth profile analysis. A theoretical treatment of the results based upon the application of thermionic and tunneling theories to double Schottky diodes was assumed.
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Bała, W., Bukaluk, A. & Siuda, R. Investigations of ZnSe-ZnO structures, by using the electrooptical and Auger depth profile methods. Appl. Phys. A 37, 231–236 (1985). https://doi.org/10.1007/BF00614822