Controlled doping of rf sputtered germanium films
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Abstract
Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
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References
- 1.W.F. Tseng, J.E. Davey, A. Christou, B.R. Wilkins: Appl. Phys. Lett.36, 435 (1981)Google Scholar
- 2.M. Mäenpää, T.F. Kuech, M.A. Nicolet, S.S. Lau, D.K. Sadana: J. Appl. Phys.53, 1076 (1982)Google Scholar
- 3.J.E. Greene: InThin Film Crystal Growth by Sputtering in Hand Book of Semiconductors, Vol. III, ed. by S. Keller (North-Holland, Amsterdam 1980)Google Scholar
- 4.J.E. Davey: J. Appl. Phys.33, 1015 (1962)Google Scholar
- 5.In-soun Ryu, Kiyoshi Takahoshi: Jpn. J. Appl. Phys.4, 850 (1965)Google Scholar
- 6.K.E. Haq: J. Electrochem. Soc.112, 500 (1965)Google Scholar
- 7.K.C. Cadien, J.E. Greene: J. Crystal Growth61, 15 (1983)Google Scholar
- 8.W. Tseng, H. Dietrich, J. Davey, A. Christou, W.T. Anderson, Jr: J. Electr. Mat.9, 685 (1980)Google Scholar
- 9.A. Christou, J.E. Davey, Y. Anand: Electron Lett.15, 324 (1979)Google Scholar
- 10.A. Lopez, R.L. Anderson: Solid State Electr.7, 695 (1964)Google Scholar
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