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Oxidation of Metals

, Volume 4, Issue 3, pp 181–201 | Cite as

The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide

  • Earl A. Gulbransen
  • Sven A. Jansson
Article

Abstract

A thermochemical analysis was made of the oxidation, reduction, and volatilization reactions which occur in the Si-O-C system. One characteristic feature is the high SiO(g) and SiO(g) + CO(g) pressures at the Si(s)-SiO2 and SiC(s)-SiO2(s) interfaces. Active oxidation with weight losses and passive oxidation with weight gains were found on oxidizing Si(s) and SiC(s) in low oxygen pressures above 1000°C. Rapid oxidation was related to the SiO(g) and SiO(g) + C0(g) pressures at the Si(s) or SiC(s)-SiO2(s) interfaces.

Keywords

Oxidation Oxygen Silicon Physical Chemistry SiO2 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1972

Authors and Affiliations

  • Earl A. Gulbransen
    • 1
  • Sven A. Jansson
    • 1
  1. 1.Westinghouse Research LaboratoriesPittsburgh

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