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Journal of Materials Science

, Volume 26, Issue 17, pp 4683–4686 | Cite as

Silicon nitride films deposited from SiF4/NH3 gas mixtures

  • C. Gomez-Aleixandre
  • O. Sanch Ez-Garrido
  • J. M. Martinez-Duart
  • J. M. Albella
Papers

Abstract

Silicon nitride films have been deposited from SiF4/NH3/H2 gas mixtures. The deposition reaction at high pressure (52 torr), takes place only for temperatures above 800°C. In the temperature range 800–1000°C the reaction is controlled by a surface process. The increase in H2 and SiF4 partial pressures enhances the deposition rate. The SiF4 molecules provide a high concentration of available silicon atoms, while the hydrogen molecules inhibit the etching effect of the free fluorine atoms. Finally, the effect of an r.f. plasma in the chemical vapour deposition reaction has been evaluated.

Keywords

Deposition Rate Silicon Nitride Fluorine Atom SiF4 Kcal Tool 

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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • C. Gomez-Aleixandre
    • 1
  • O. Sanch Ez-Garrido
    • 1
  • J. M. Martinez-Duart
    • 1
  • J. M. Albella
    • 1
  1. 1.Institut Ciencia de MaterialesCSIC, Universidad AutonomaMadridSpain

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