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An automatic carrier concentration profile plotter using an electrochemical technique

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Abstract

A fully automatic system which directly plots semiconductor carrier concentration profiles to any required depth is described. An electrolytic Schottky barrier permits simultaneous controlled dissolution and capacitance-voltage measurements. Examples of profiles obtained in multiple epitaxial layer structures ofn-type gallium arsenide are given.

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References

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Ambridge, T., Faktor, M.M. An automatic carrier concentration profile plotter using an electrochemical technique. J Appl Electrochem 5, 319–328 (1975). https://doi.org/10.1007/BF00608796

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Keywords

  • Physical Chemistry
  • Gallium
  • Layer Structure
  • Carrier Concentration
  • Automatic System