The etch rate behaviour of tetraethylorthosilicate (TEOS)-SiO2 films was investigated as a function of annealing parameters (time, temperature and ambient pressure). The etch rate of TEOS-SiO2 films depends strongly on annealing pressure within the temperature range 750 to 900‡ C, while the etch-rate behaviour of films thermally annealed at 1000‡ C is mainly controlled by the thermally activated rearrangements of SiO4 tetrahedra from as-deposited films in a closed structure to that of thermally grown SiO2 films. The etch-rate behaviour of thermally annealed TEOS-SiO2 films is interpreted in terms of the chemical change of the film structure.
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Orfescu, C., Pavelescu, C. & Badila, M. An etch rate study on thermally annealed SiO2 films deposited in a TEOS-LPCVD system. J Mater Sci 25, 1366–1368 (1990). https://doi.org/10.1007/BF00585451
- Etch Rate
- Si02 Film
- Annealing Pressure
- SiO2 Film
- Densification Temperature