Plasma Chemistry and Plasma Processing

, Volume 6, Issue 3, pp 197–203 | Cite as

Etching of metals by means of organic radicals

  • Christa Haag
  • Harald Suhr
Article
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Revised:

Abstract

A new method for the etching of In, Sn, Pb, Sb, Bi, and Zn films in methane and acetone discharges was examined with respect to various parameters such as electrode temperature, power density, bias, and reaction period. The etching species are assumed to be CH3 radicals forming a volatile metallorganic compound, since etch rates in hydrogen plasmas or argon sputter rates are orders of magnitude lower. Etch rates up to 1600 Å/min could be obtained.

Key words

Plasma etching organic radicals metallorganic compounds 
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Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • Christa Haag
    • 1
  • Harald Suhr
    • 1
  1. 1.Department of Organic ChemistryUniversity of Tübingen74 TübingenWest Germany

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