Hyperfine Interactions

, Volume 79, Issue 1–4, pp 575–589 | Cite as

Defects in semiconductors observed by positron annihilation

  • Shoichiro Tanigawa
Section III.3: Semiconductors

Abstract

The origin of the effect of defects on positron annihilation in semiconductors has been studied. The electron-positron momentum densities in elemental semiconductors (Si and Ge), III-V compound semiconductors (GaAs, InP and GaSb), diamond and the proton irradiated Si were investigated by a full-scale use of the two-dimensional angular correlation of positron annihilation radiations (2D-ACAR). The obtained results showed, as a whole, good agreement with the electron momentum distribution of the fully occupied Jones zone with a small exception for the fact that the low density channels are running along the three principal axes. This anisotropy was strong in elemental semiconductors, while it was weakened in compound semiconductors. This anisotropy and its dependence on the material were found to be generally understood by the incorporation of crystal symmetry. The anisotropy will be discussed by group theory in conjunction to the effect of defects on positron annihilation.

Keywords

Anisotropy GaAs Principal Axis GaSb Momentum Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. [1]
    L. Dorikens-Vanpraet, M. Dorikens and D. Segers, eds.,Positron Annihilation (World Scientific, Singapore, 1989).Google Scholar
  2. [2]
    J.C. Erskine and J.D. McGervey, Phys. Rev. 151 (1966) 615.Google Scholar
  3. [3]
    D. Stroud and H. Ehrenreich, Phys. Rev. 171 (1968) 399.Google Scholar
  4. [4]
    K. Fujiwara, J. Phys. Soc. Japan 29 (1970) 1479.Google Scholar
  5. [5]
    K. Fujiwara, T. Hyodo and J. Ohyama, J. Phys. Soc. Japan 33 (1972) 1047.Google Scholar
  6. [6]
    K. Fujiwara and T. Hyodo, J. Phys. Soc. Japan 35 (1973) 1133.Google Scholar
  7. [7]
    M.A. Shullman, G.M. Beardsley and S. Berko, Appl. Phys. 5 (1975) 367.Google Scholar
  8. [8]
    R.N. West, J. Mayers and P.A. Walters, J. Phys. E 14 (1981) 478.Google Scholar
  9. [9]
    T. Chiba and T. Akahene, in:Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 674.Google Scholar
  10. [10]
    S. Tanigawa, in:Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 119.Google Scholar
  11. [11]
    R. Suzuki, M. Osawa, S. Tanigawa, M. Matsumoto and N. Shiotani, J. Phys. Soc. Japan 58 (1989) 3251.Google Scholar
  12. [12]
    M. Saito, A. Oshiyama and S. Tanigawa, Phys. Rev. B 44 (1991) 10601.Google Scholar
  13. [13]
    P.E. Mijnarends, Physica 63 (1972) 235.Google Scholar
  14. [14]
    R. Harthoon and P.E. Mijnarends, J. Phys. F 8 (1978) 1147.Google Scholar

Copyright information

© J.C. Baltzer AG, Science Publishers 1993

Authors and Affiliations

  • Shoichiro Tanigawa
    • 1
  1. 1.Institute of Materials ScienceUniversity of TsukubaTsukuba, IbarakiJapan

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