Plasma Chemistry and Plasma Processing

, Volume 2, Issue 1, pp 1–41 | Cite as

Plasma-assisted etching

  • J. W. Coburn
Article

Abstract

The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection and operation.

Key words

Plasma etching mechanisms apparatus selection review 

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© Plenum Publishing Corporation 1982

Authors and Affiliations

  • J. W. Coburn
    • 1
  1. 1.IBM Research LaboratorySan Jose

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