Optical and Quantum Electronics

, Volume 27, Issue 5, pp 553–559 | Cite as

High-performance InGaAs/InP avalanche photodiode for a 2.5 Gb s-1 optical receiver

  • C. Y. Park
  • K. S. Hyun
  • S. K. Kang
  • M. K. Song
  • T. Y. Yoon
  • H. M. Kim
  • H. M. Park
  • S. -C. Park
  • Y. H. Lee
  • C. Lee
  • J. B Yoo
Systems Applications
Received:
Accepted:

Abstract

High-speed mesa type SAGCM avalanche photodiodes for 2.5 Gb s-1 optical receivers have been realized for the first time. The device is designed by dimensional analysis based on the electric field distribution in a multiplication layer and a charge plate layer. Very low dark current and high gain are obtained with an active region of 30 μm diameter. From the 1.55 μm wavelength 2.488 Gb s-1 transmission experiment, sensitivity of-33.6 dBm is measured using pseudorandom (223–1) NRZ patterns.

Keywords

Active Region Communication Network Field Distribution Dimensional Analysis High Gain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. 1.
    J. C.Campbell, W. S.Holden, G. H.Qua andA. G.Dentai,IEEE J. Quantum Electron. QE-21 (1985) 1743.Google Scholar
  2. 2.
    K.Taguchi, T.Torikai, Y.Sugimoto, K.Makita andH.Ishihara,J. Lightwave Technol. 6 (1988) 1643.Google Scholar
  3. 3.
    J. N.Hollenhorst, D. T.Ekholm, J. M.Geary, V. D.MatteraJr andR.Pawelek,High Frequency Analog Communications, SPIE 995 (1988) 53.Google Scholar
  4. 4.
    J. C.Campbell, B. C.Johnson, G. J.Qua andW. T.Tsang,J. Lightwave Technol. 7 (1989) 778.Google Scholar
  5. 5.
    H.Imai andT.Kaneda,J. Lightwave Technol. 6 (1988) 1643.Google Scholar
  6. 6.
    S. M.Sze andG.Gibbons,Solid-State Electron. 9 (1966) 831.Google Scholar
  7. 7.
    L. E.Tarof, D. G.Knight, K. E.Fox, C. J.Miner, N.Puetz andH. B.Kim,Appl. Phys. Lett. 57 (1990) 670.Google Scholar
  8. 8.
    L. E.Tarof, J.Yu, R.Bruce, D. G.Knight, T.Baird andB.Oosterbrink,IEEE Photon. Technol. Lett. 5 (1993) 672.Google Scholar
  9. 9.
    T.Shiba, E.Ishimura, K.Takahashi, H.Namizaki andW.Susaki,J. Lightwave Technol. 6 (1988) 1502.Google Scholar
  10. 10.
    L. W.Cook, G. E.Bulman andG. E.Stillman,Appl. Phys. Lett. 40 (1982) 589.Google Scholar
  11. 11.
    M.Ito, T.Mikawa andO.Wada,J. Lightwave Technol. 8 (1990) 1046.Google Scholar
  12. 12.
    S. R.Forrest, R. G.Smith andO. K.Kim,IEEE J. Quantum. Electron. QE-18 (1982) 2040.Google Scholar
  13. 13.
    R. B.Emmons,J. Appl. Phys. 38 (1967) 3705.Google Scholar
  14. 14.
    S. J.Pearton, U. K.Chakrabarti andF. A.Baiocchi,Appl. Phys. Lett. 55 (1989) 1633.Google Scholar
  15. 15.
    T. R.Hayes, M. A.Dreisbach, P. M.Thomas, W. C.Dautremont-Smith andL. A.Heimbrook,J. Vacuum Sci. Technol. B 7 (1989) 1130.Google Scholar
  16. 16.
    T. R.Hayes, W. C.Dautremont-Smith, H. S.Luftman andJ. W.Lee,Appl. Phys. Lett. 55 (1989) 56.Google Scholar
  17. 17.
    M.Gallant andA.Zemel,Appl. Phys. Lett. 52 (1988) 1686.Google Scholar

Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • C. Y. Park
    • 1
  • K. S. Hyun
    • 1
  • S. K. Kang
    • 1
  • M. K. Song
    • 1
  • T. Y. Yoon
    • 1
  • H. M. Kim
    • 1
  • H. M. Park
    • 1
  • S. -C. Park
    • 1
  • Y. H. Lee
    • 2
  • C. Lee
    • 2
  • J. B Yoo
    • 3
  1. 1.Compound Semiconductor DepartmentElectronics and Telecommunications Research Institute, Yusong-kuTaejonKorea
  2. 2.Department of PhysicsKorea Advanced Institute of Science and TechnologyTaejonKorea
  3. 3.Department of Materials EngineeringSungkyunkwan UniversitySuwonKorea

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