It has been found that there are two main factors complicating the preparation of CdxHg1−xTe. The marked difference between the liquidus and solidus curves of the CdTe-HgTe pseudo-binary system gives the expected problems of segregation of CdTe with respect to HgTe during growth but there are also problems due to the segregation of any excess Te in the melt. A 2% excess of Te can give rise to pronounced constitutional supercooling effects. To avoid this, careful control of melt stoichiometry is required. This is made difficult by the high vapour pressure of mercury over the melt, the value of which is not known with great accuracy.
The conditions of melt stoichiometry required for crystal growth do not necessarily give material of the required type and resistivity and this must be adjusted after growth by annealing at a controlled mercury pressure at a fixed temperature.
This is a preview of subscription content, log in to check access.
Buy single article
Instant access to the full article PDF.
Price includes VAT for USA
Subscribe to journal
Immediate online access to all issues from 2019. Subscription will auto renew annually.
This is the net price. Taxes to be calculated in checkout.
W. D. Lawson, S. Nielson, E. H. Putley, and A. S. Young, J. Phys. Chem. Solids 9 (1959) 325.
T. C. Harman, “Physics and Chemistry of II–VI Compounds”, edited by M. Aven and J. S. Prener (North Holland Publishing Co, Amsterdam, 1967) p. 767.
J. Blair and R. Newnham, “Metallurgy of Elemental and Compound Semiconductors” (Interscience, New York, 1961) p. 393.
W. A. Tiller, “The Art and Science of Growing Crystals” (Wiley, New York, 1963) p. 294.
H. Rodot, Thesis, Paris, 1964.
T. C. Harman, B. Paris, S. E. Miller, and H. L. Goering, J. Phys. Chem. Solids 2 (1957) 181.
R. T. Delves, Brit. J. Appl. Phys. 16 (1965) 343.
J. A. Burton and W. P. Slichter, “Transistor Technology”, edited by H. E. Bridgers, J. H. Scaff and J. N. Shive (D. Van Nostrand Company Inc, New York, 1958) p. 71.
M. Rodot, H. Rodot, and C. Verie, “Proc. of 7th International Conference on the Physics of Semiconductors” (Paris, 1964) p. 1236.
About this article
Cite this article
Bartlett, B.E., Deans, J. & Ellen, P.C. Growth and properties of CdxHg1−xTe crystals. J Mater Sci 4, 266–270 (1969). https://doi.org/10.1007/BF00549927
- Vapour Pressure
- Crystal Growth
- Great Accuracy