Journal of Materials Science

, Volume 6, Issue 11, pp 1389–1396 | Cite as

A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements

  • A. F. W. Willoughby
  • C. M. H. Driscoll
  • B. A. Bellamy
Papers
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Accepted:

Abstract

An automatic method of precision lattice parameter measurement, capable of repeated measurement at intervals across single crystals with an accuracy of better than one part in 106, has been applied to gallium arsenide. The technique has been used to compare homogeneity of material grown from the melt with that prepared by vapour and liquid epitaxy, to study material grown from the melt under various pressures of arsenic, and to investigate the effect of heavy doping on the lattice parameter. The technique is shown to provide new and interesting information on defects in gallium arsenide.

Keywords

Polymer Arsenic Repeated Measurement Gallium Parameter Measurement 
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References

  1. 1.
    M. E. Straumanis and C. D. Kim, Acta Cryst. 19 (1965) 256.Google Scholar
  2. 2.
    B. K. Chakraverty and R. W. Dreyfus, J. Appl. Phys. 37 (1966) 631.Google Scholar
  3. 3.
    B. Goldstein and N. Almeleh, Appl. Phys. Letters 2 (1963)130.Google Scholar
  4. 4.
    J. Blanc, R. H. Bube, and L. R. Weisburg, J. Phys. Chem. Solids 25 (1964) 225.Google Scholar
  5. 5.
    M. Fujimoto, Y. Sato, and K. Kudo, Jap. J. Appl. Phys. 6 (1967) 848.Google Scholar
  6. 5a.
    F. A. Cunnell and C. H. Gooch, J. Phys. Chem. Solids 15 (1960) 127.Google Scholar
  7. 5b.
    L. J. Vieland, J. Phys. Chem. Solids 21 (1961) 318.Google Scholar
  8. 5c.
    H. Rupprecht and C. Z. Le May, J. Appl. Phys. 35 (1964) 1970.Google Scholar
  9. 6.
    M. S. Seltzer, J. Phys. Chem. Solids 26 (1965) 243.Google Scholar
  10. 7.
    E. W. Williams and D. M. Blacknell, Trans AIME 239 (1967) 387.Google Scholar
  11. 8.
    E. W. Williams, Solid State Communications 4 (1966) 585.Google Scholar
  12. 9.
    M. Toyama, Japanese J. Appl. Phys. 8 (1969) 1000.Google Scholar
  13. 10.
    H. Otsuka, K. Ishida, and J. Nishizawa, ibid 8 (1969) 632.Google Scholar
  14. 11.
    E. Muñoz, W. L. Snyder, and J. L. Moll, Appl. Phys. Letters 16 (1970) 262.Google Scholar
  15. 12.
    H. R. Potts and G. L. Pearson, J. Appl. Phys. 37 (1966) 5.Google Scholar
  16. 13.
    W. L. Bond, Acta Cryst. 13 (1960) 814.Google Scholar
  17. 14.
    T. W. Baker, J. D. George, B. A. Bellamy, and R. Causer, Advances in X-ray Analysis 11 (1968) 359.Google Scholar
  18. 14b.
    T. W. Baker, J. D. George, B. A. Bellamy, and R. Causer, Research Report, AERE-R5152.Google Scholar
  19. 15.
    E. D. Pierron and J. B. Mcneely, Advances in X-ray Analysis 12 (1968) 343.Google Scholar
  20. 16.
    R. E. Honig, R.C.A. Review 23 (1962) 567.Google Scholar
  21. 17.
    J. Van Der Boomgaard and K. Schol, Philips Res. Rep. 12 (1957) 127.Google Scholar
  22. 18.
    E. D. Pierron, J. W. Burd, and J. B. Mcneely, Trans. AIME 1 (1970) 639.Google Scholar
  23. 19.
    B. G. Cohen and M. W. Focht, Solid-State Electronics 13 (1970) 105.Google Scholar
  24. 20.
    A. D. Kurtz, S. A. Kulin, and B. L. Averbach, Phys. Rev. 101 (1956) 1285.Google Scholar
  25. 21.
    E. S. Meieran, J. Appl. Phys. 36 (1965) 2544.Google Scholar
  26. 22.
    M. S. Abrahams, C. J. Buiocchi, and J. J. Tietjen ibid 38 (1967) 760.Google Scholar
  27. 23.
    M. S. Abrahams and C. J. Buiocchi, J. Phys. Chem. Solids 28 (1967) 927.Google Scholar
  28. 24.
    H. Kressel, F. Z. Hawrylo, M. S. Abrahams, and C. J. Buiocchi, J. Appl. Phys. 39 (1968) 5139.Google Scholar
  29. 25.
    H, Kressel, H. Nelson, S. H. Mcfarlane, M. S. Abrahams, P. Le Fur, and C. J. Buiocchi, ibid 40 (1969) 3587.Google Scholar
  30. 26.
    D. Laister and G. M. Jenkins, J. Mater. Sci. 3 (1968) 584.Google Scholar
  31. 27.
    Idem, Phil Mag. 20 (1969) 361.Google Scholar
  32. 28.
    J. C. Brice and G. D. King, Nature 209 (1966) 1346.Google Scholar
  33. 29.
    N. F. Mott and R. W. Gurney, “Electronic Process in Ionic Crystals”, Oxford (1940).Google Scholar
  34. 30.
    S. W. Kurnick, J. Chem. Phys. 20 (1952) 219.Google Scholar
  35. 31.
    R. A. Swalin, J. Phys. Chem. Solids 18 (1961) 290.Google Scholar
  36. 32.
    F. L. Vook, Proc. 7th International Conference on the Physics of Semi-coductors, Paris 1965.Google Scholar
  37. 33.
    S. Asano and Y. Tomishima, j.Phys. Soc.Japan 13 (1958) 1126.Google Scholar
  38. 34.
    A. J. Bradley and A. Taylor, Proc. Roy.Soc. A159 (1937) 56.Google Scholar
  39. 35.
    H. W. King, J. Mater. Sci. 1 (1966) 79.Google Scholar
  40. 36.
    C. Hilsum and A. C. Rose-Innes, “Semiconducting III-V compounds” (Pergamon 1961).Google Scholar
  41. 37.
    C. Kolm, S. A. Kulin, and B. L. Averbach, Phys. Rev. 108 (1957) 965.Google Scholar

Copyright information

© Chapman and Hall Ltd. 1971

Authors and Affiliations

  • A. F. W. Willoughby
    • 1
  • C. M. H. Driscoll
    • 1
  • B. A. Bellamy
    • 2
  1. 1.Engineering Materials LaboratoriesThe UniversitySouthamptonUK
  2. 2.Solid State DivisionAtomic Energy Research EstablishmentHarwellUK

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