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Journal of Materials Science

, Volume 23, Issue 8, pp 2697–2711 | Cite as

The formation of microsplits and damage rafts in proton-bombarded GaAs

  • J. H. Neethling
  • H. C. Snyman
Article

Abstract

The technique of cross-sectional transmission electron microscopy has been used to study the nature and formation of damage rafts, which act as dislocation sources, in proton-bombarded (5×1015, 1016 and 1017 H+ cm−2) and annealed GaAs. The results show that the rafts consist of a planar array of voids lying on the {110} cleavage planes of GaAs. The dislocations generated at these rafts are glissile, of the (a/2) 〈110〉 type, and glide on the {111} planes intersecting the rafts. Models are presented to show that these damage rafts originated at microsplits on the {110} cleavage planes of GaAs following the cracking open of small hydrogen-filled platelets on {110} planes when the internal gas pressure exceeds that which is necessary for crack propagation. From the analysis of the results an average diffusion length of ∼1 μm was estimated for vacancies in proton-bombarded GaAs at ∼900° C.

Keywords

Polymer Microscopy Electron Microscopy Transmission Electron Microscopy GaAs 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1988

Authors and Affiliations

  • J. H. Neethling
    • 1
  • H. C. Snyman
    • 1
  1. 1.Department of PhysicsUniversity of Port ElizabethPort ElizabethRepublic of South Africa

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