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Journal of Materials Science

, Volume 20, Issue 9, pp 3277–3282 | Cite as

Structural and optical properties of Zn3P2 thin films

  • V. J. Rao
  • Madhuri V. Salvi
  • V. Samuel
  • A. P. B. Sinha
Papers

Abstract

Conditions have been developed for the deposition of a stoichiometric thin film of zinc phosphide (Zn3P2) using electron beam evaporation. Structural properties of as-deposited and annealed thin films of zinc phosphide have been studied using electron and X-ray diffraction. The as-deposited film is non-crystalline, structural ordering starts on annealing at 200° C and the film becomes crystalline at 300° C with the structure matching that of the bulk material. Optical absorption has been investigated over the range 1 to 3 eV with emphasis on the region of interband absorption. The thin film absorption edge is found to be exponential for lower values of absorption coefficient. Analysis of thin film data showed that Zn3P2 is a direct-band-gap material. On annealing there is a shift in the band edge towards higher energy.

Keywords

Optical Absorption Electron Beam Evaporation Annealed Film Zn3P2 Interband Absorption 

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References

  1. 1.
    A. Catalano, V. Dalal, W. E. Devarey, E. A. Fagen, R. B. Hall, J. V. Masi, J. D. Meakin, G. Warfield, N. Converswejeth and A. M. Barnett, Proceedings of 13th IEEE Photovoltaic Specialists Conference, 1978, Washington, DC, p. 288.Google Scholar
  2. 2.
    A. Catalano V. Dalal, Proceedings of the International Conference on Photovoltaic Solar Energy, Luxemburg, 1977 (Reidel, Dordrecht, 1977) p. 644.Google Scholar
  3. 3.
    T. L. Chu, S. Chu, K. Murthy and E. D. Stokes, J. Appl. Phys. 54 (1983) 2063.CrossRefGoogle Scholar
  4. 4.
    J. M. Pawlikowski, Solid State Electronics 23 (1980) 755.CrossRefGoogle Scholar
  5. 5.
    Madhuri Salvi, V. Samuel and V. J. Rao, Proceedings of the Symposium on Photovoltaic Materials and Devices, New Delhi, May 10–11, 1984, p. 89.Google Scholar
  6. 6.
    P. J. Linchung, Phys. Status Solidi b 47 (1971) 33.CrossRefGoogle Scholar
  7. 7.
    F. C. Wang and R. H. Bube, J. Appl. Phys. 53 (1982) 3335.CrossRefGoogle Scholar
  8. 8.
    E. A. Fagen, ibid. 50 (1979) 6505.CrossRefGoogle Scholar
  9. 9.
    A. Catalano, J. Cryst. Growth 49 (1980) 681.CrossRefGoogle Scholar
  10. 10.
    E. J. Johnson, “Semiconductors and semi metals”, Vol. III (Academic Press, New York, 1967).Google Scholar

Copyright information

© Chapman and Hall Ltd 1985

Authors and Affiliations

  • V. J. Rao
    • 1
  • Madhuri V. Salvi
    • 1
  • V. Samuel
    • 1
  • A. P. B. Sinha
    • 1
  1. 1.Physical Chemistry DivisionNational Chemical LaboratoryPoonaIndia

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