Journal of Materials Science

, Volume 11, Issue 7, pp 1246–1253 | Cite as

Oxidation kinetics of hot-pressed silicon carbide

  • S. C. Singhal


The oxidation of silicon carbide, hot-pressed with ∼ 4 wt % Al2O3, in 1 atm dry oxygen follows classical parabolic behaviour with an activation energy of 481 kJ mol−1 in the temperature range 1200 to 1400° C. The oxide film consists predominantly of cristobalite and a glassy phase in which additive (Al) and various impurity elements (Fe, Na, K, etc) concentrate. The desorption of CO(g) from the SiC/SiO2 interface appears to be oxidation rate controlling.


Oxidation Oxygen Polymer Silicon Carbide 
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Copyright information

© Chapman and Hall Ltd 1976

Authors and Affiliations

  • S. C. Singhal
    • 1
  1. 1.Metallurgy and Metals ProcessingWestinghouse Research LaboratoriesPittsburghUSA

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