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Journal of Materials Science

, Volume 11, Issue 7, pp 1246–1253 | Cite as

Oxidation kinetics of hot-pressed silicon carbide

  • S. C. Singhal
Papers

Abstract

The oxidation of silicon carbide, hot-pressed with ∼ 4 wt % Al2O3, in 1 atm dry oxygen follows classical parabolic behaviour with an activation energy of 481 kJ mol−1 in the temperature range 1200 to 1400° C. The oxide film consists predominantly of cristobalite and a glassy phase in which additive (Al) and various impurity elements (Fe, Na, K, etc) concentrate. The desorption of CO(g) from the SiC/SiO2 interface appears to be oxidation rate controlling.

Keywords

Oxidation Oxygen Polymer Silicon Carbide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd 1976

Authors and Affiliations

  • S. C. Singhal
    • 1
  1. 1.Metallurgy and Metals ProcessingWestinghouse Research LaboratoriesPittsburghUSA

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