Journal of Materials Science

, Volume 27, Issue 6, pp 1484–1490 | Cite as

Effect of some growth parameters on vacuum-deposited CulnSe2 films

  • M. M. El-Nahass
  • H. S. Soliman
  • D. A. Hendi
  • Kh. A. Mady


P-type copper indoselenide (CulnSe2) thin films were vacuum-deposited on glass substrates by a single-source thermal evaporation technique under different conditions of preparation. The structural properties of the films were investigated by X-ray diffraction and transmission electron microscopy and diffraction techniques. The dark resistivity of the deposited films was investigated as a function of film thickness, deposition rate and substrate temperature. The conductivity activation energy ranges from 0.851 to 1.01 eV depending on the deposition rate. Single-phase and stoichiometric CulnSe2 films could be deposited at low deposition rates (less than 4 nms−1). Higher deposition rates led to multiphase films containing InSe, ln2Se3, CuSe and Cu3Se2 in addition to CulnSe2.


Transmission Electron Microscopy Activation Energy Glass Substrate Substrate Temperature Deposition Rate 
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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • M. M. El-Nahass
    • 1
  • H. S. Soliman
    • 1
  • D. A. Hendi
    • 2
  • Kh. A. Mady
    • 3
  1. 1.Faculty of EducationAin Shams UniversityHeliopolis, CairoEgypt
  2. 2.Girls' College of EducationJeddahSaudi Arabia
  3. 3.Physics DepartmentNational Research CentreDokki, CairoEgypt

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