Effect of some growth parameters on vacuum-deposited CulnSe2 films
- 47 Downloads
P-type copper indoselenide (CulnSe2) thin films were vacuum-deposited on glass substrates by a single-source thermal evaporation technique under different conditions of preparation. The structural properties of the films were investigated by X-ray diffraction and transmission electron microscopy and diffraction techniques. The dark resistivity of the deposited films was investigated as a function of film thickness, deposition rate and substrate temperature. The conductivity activation energy ranges from 0.851 to 1.01 eV depending on the deposition rate. Single-phase and stoichiometric CulnSe2 films could be deposited at low deposition rates (less than 4 nms−1). Higher deposition rates led to multiphase films containing InSe, ln2Se3, CuSe and Cu3Se2 in addition to CulnSe2.
KeywordsTransmission Electron Microscopy Activation Energy Glass Substrate Substrate Temperature Deposition Rate
Unable to display preview. Download preview PDF.
- 2.L. L. Kazmerski, in “Proceedings Third International Conference on Ternary Compounds 1977”, Edinburgh, Institute of Physics Conference Series, Vol. 35 (1977) p. 217.Google Scholar
- 4.K. Hess, Nachrichtentech, Electron.6 (1979) 185.Google Scholar
- 7.J. B. Mooney, R. H. Lamoroeaux and C. W. Bates, SERI PR-8104-TI. (Solar Energy Research Institute, Golden, Colorado, 1980).Google Scholar
- 12.R. A. Michelson and W. S. Chen, in Proceedings of 15th IEEE Conference on Photovoltaic Specialists, Orlando, FL, May 12–15, 1981 (IEEE, New York, 1981) p. 800.Google Scholar
- 15.R. D. Tomlinson, D. Omezi, J. Parkes and M. J. Hampshire, Thin Solid Films64 (1979) L3.Google Scholar
- 21.W. R. Runyam, “Semiconductor Measurements and Instrumentations” (McGraw Hill, Kayakusha Ltd, 1975).Google Scholar