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Journal of Materials Science

, Volume 27, Issue 6, pp 1484–1490 | Cite as

Effect of some growth parameters on vacuum-deposited CulnSe2 films

  • M. M. El-Nahass
  • H. S. Soliman
  • D. A. Hendi
  • Kh. A. Mady
Papers

Abstract

P-type copper indoselenide (CulnSe2) thin films were vacuum-deposited on glass substrates by a single-source thermal evaporation technique under different conditions of preparation. The structural properties of the films were investigated by X-ray diffraction and transmission electron microscopy and diffraction techniques. The dark resistivity of the deposited films was investigated as a function of film thickness, deposition rate and substrate temperature. The conductivity activation energy ranges from 0.851 to 1.01 eV depending on the deposition rate. Single-phase and stoichiometric CulnSe2 films could be deposited at low deposition rates (less than 4 nms−1). Higher deposition rates led to multiphase films containing InSe, ln2Se3, CuSe and Cu3Se2 in addition to CulnSe2.

Keywords

Transmission Electron Microscopy Activation Energy Glass Substrate Substrate Temperature Deposition Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • M. M. El-Nahass
    • 1
  • H. S. Soliman
    • 1
  • D. A. Hendi
    • 2
  • Kh. A. Mady
    • 3
  1. 1.Faculty of EducationAin Shams UniversityHeliopolis, CairoEgypt
  2. 2.Girls' College of EducationJeddahSaudi Arabia
  3. 3.Physics DepartmentNational Research CentreDokki, CairoEgypt

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