Journal of Materials Science

, Volume 9, Issue 12, pp 2025–2033 | Cite as

Wetting of silicon nitride by alkaline-doped MgSiO3

  • Ram Kossowsky
Papers
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Accepted:

Abstract

The wetting behaviour of Si3N4 by alkaline-doped MgSiO3 was investigated by the sessile drop method. It is shown that the alkaline oxide additions improve the wetting of MgSiO3 on Si3N4. The hot-pressing of Si3N4 is controlled by a liquid phase sintering process where the dissolution of Si3N4 in silicate glass promotes good wetting and a well bonded interface by lowering the liquid-solid interfacial energy. Controlling total alkaline impurity level between 50 and 100 ppm is suggested for an optimal strength performance.

Keywords

Nitride Silicon Nitride Interfacial Energy Silicate Glass Total Alkaline 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Chapman and Hall Ltd. 1974

Authors and Affiliations

  • Ram Kossowsky
    • 1
  1. 1.Materials Science Section, Metallurgy and Metals Processing DepartmentWestinghouse Research LaboratoriesPittsburghUSA

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