Molecular beam epitaxy (MBE) grown GaAs films on Si substrates (0 0 1) 4° off towards 〈1 1 1〉 A and towards 〈1 1 1〉 B, were examined by means of transmission electron microscopy (TEM). The results indicate that in both samples, threading dislocations in the GaAs epilayer are blocked mainly in a thin layer near the GaAs-Si interface. This thin layer is like an inner interface, consisting of pyramidal islands and is flatter on the As growth surface than that on the Ga growth surface. In the type B sample, the density of dislocations is lower, the inner interface is flatter and the number of twins is much larger than that in the type A sample.
Polymer Microscopy Electron Microscopy Transmission Electron Microscopy GaAs
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