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Journal of Materials Science

, Volume 31, Issue 3, pp 603–606 | Cite as

Surface morphology of polycrystalline diamond films etched by Ar+ beam bombardment

  • Hidetoshi Saitoh
  • Takunori Kyuno
  • Ichiro Hosoda
  • Ryoichi Urao
Papers

Abstract

Polycrystalline diamond films etched by Ar+ beam bombardment were investigated by scanning electron microscopy and Raman spectroscopy. In an ion sputtering apparatus, an etching rate of 14 μm C−1 was obtained when 10 kV-accelerated Ar+ ions penetrated with an angle of 15–30° from the normal. A number of cavities were created on the surface treated at low incidence angle. In contrast, micro-prominence was seen under the condition of high incidence angle. The degree of surface roughness on etched films was also changed with the incidence angle of the beam. A relatively smooth surface appeared after the treatment with an incidence angle of ⩾ 15°. Raman spectroscopy revealed that the physical etching of diamond is effective in obtaining high quality surface of polycrystalline diamond films.

Keywords

Polymer Microscopy Electron Microscopy Scanning Electron Microscopy Surface Roughness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    T. J. WHETTEN, A. A. ARMSTEAD, T. A. GRZYBOWSKI and A. L. RUOFF, J. Vac. Sci. Technol. A 2 (1984) 477.CrossRefGoogle Scholar
  2. 2.
    M. J. WITCOMB, Rad. Eff. 27 (1976) 223.CrossRefGoogle Scholar
  3. 3.
    G. S. SANDHU and W. K. CHU, Appl. Phys. Lett. 55 (1989) 437.CrossRefGoogle Scholar
  4. 4.
    D. F. GROGAN, T. ZHAO, B. G. BOVARD and H. A. MACLEOD, Appl. Opt. 31 (1992) 1487.CrossRefGoogle Scholar
  5. 5.
    R. RAMESHAM and B. H. LOO, J. Electrochem. Soc. 139 (1992) 1988.CrossRefGoogle Scholar
  6. 6.
    D. P. MALTA, J. B. POSTHILL, R. A. RUDDER, G. C. HUDSON and R. J. MARKUNAS, J. Mater. Res. 8 (1993) 1217.CrossRefGoogle Scholar
  7. 7.
    W. ZHU, X. H. WANG, A. BADZIAN and R. MESSIER, in “Proceedings 2nd International Symposium New Diamond Science and Technology”, 1990, Washington D. C., edited by R. MESSIER, J. T. GLASS, J. E. BUTLER and R. ROY (Materials Research Society, Pittsburgh, PA, 1990) p. 537.Google Scholar
  8. 8.
    A. JOSHI, R. NIMMAGADDA and J. HERRINGTON, J. Vac. Sci. Technol. A 8 (1990) 2137.CrossRefGoogle Scholar
  9. 9.
    K. KAMATA, T. INOUE, K. SUGAI, H. SAITOH and K. MARUYAMA, J. Appl. Phys., 18 (1995) 1394.CrossRefGoogle Scholar
  10. 10.
    C. WEISSMANTEL, K. BEWILOGUA, K. BREUER, D. DIETRICH, U. EBERSBACH, H.-J. ERLER, B. RAU and G. REISSE, Thin Solid Films 96 (1982) 31.CrossRefGoogle Scholar
  11. 11.
    N. SAVVIDES, J. Appl. Phys. 59 (1986) 4133.CrossRefGoogle Scholar

Copyright information

© Chapman & Hall 1996

Authors and Affiliations

  • Hidetoshi Saitoh
    • 1
  • Takunori Kyuno
    • 1
  • Ichiro Hosoda
    • 1
  • Ryoichi Urao
    • 1
  1. 1.Faculty of EngineeringIbaraki UniversityIbarakiJapan

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