Vanadium dioxide thin films prepared by chemical vapour deposition from vanadium(III) acetylacetonate
- 408 Downloads
Vanadium dioxide thin films were prepared by an atmospheric-pressure chemical vapour deposition method. The raw material was vanadium(III) acetylacetonate. Polycrystalline thin films were obtained at a reaction temperature of 500°C. Slow post-deposition cooling of the deposits on a substrate of fused quartz or sapphire single crystal yields vanadium dioxide films which are not mixed with other phases, i.e. V3O7 or V4O9. Optical and electrical switching behaviours strongly depend on film thickness. At a film thickness of about 300 nm the transition temperature showed a minimum value of 44 °C.
KeywordsVanadium Sapphire Chemical Vapour Deposition Acetylacetonate Switching Behaviour
Unable to display preview. Download preview PDF.
- 1.C. B. Greenberg, Thin Solid Films 110 (1983) 73.Google Scholar
- 2.Y. Takahashi, M. Kanamori, H. Hashimoto, Y. Moritani and Y. Masuda, J. Mater. Sci. 24 (1989) 192.Google Scholar
- 3.D. P. Partlow, S. R. Gurkovich, K. C. Radford and L. J. Denes, J. Appl. Phys. 70 (1991) 443.Google Scholar
- 4.E. E. Chain, J. Vac. Sci. Technol. A4 (1986) 432.Google Scholar
- 5.J. F. De Natale, P. J. Hood and A. B. Haker, J. Appl. Phys. 66 (1989) 5844.Google Scholar
- 6.F. Cardillo Case, J. Vac. Sci. Technol. A2 (1984) 1509.Google Scholar
- 7.J. B. MacChesney, J. F. Potter and H. J. Guggenheim, J. Electrochem. Soc. 115 (1968) 52.Google Scholar
- 8.L. A. Ryabova, I. A. Serbinov and A. S. Darevsky, ibid. 119 (1972) 427.Google Scholar
- 9.R. L. Remke, R. M. Walser and R. W. Bené, Thin Solid Films 61 (1979) 73.Google Scholar