Journal of Materials Science

, Volume 30, Issue 16, pp 4195–4198 | Cite as

Defect annealing of neutron-irradiated silicon crystals

  • Meng Xiang-Ti
  • Zuo Kai-Fen


Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, activation energy of some annealing stages was calculated and some specific annealing phenomena were explained.


Hydrogen Radiation Polymer Spectroscopy Silicon 
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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • Meng Xiang-Ti
    • 1
  • Zuo Kai-Fen
    • 1
  1. 1.Institute of Nuclear Energy TechnologyTsinghua UniversityBeijingPeople’s Republic of China

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