Journal of Materials Science

, Volume 30, Issue 16, pp 4014–4018 | Cite as

Modelling of multilayer films using spectroscopic ellipsometry

  • K. Chattopadhyay
  • J. Aubel
  • S. Sundaram


A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of lnxGa1−xAs on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ.


Oxide Polymer GaAs Refraction Oxide Layer 
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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • K. Chattopadhyay
    • 1
  • J. Aubel
    • 1
  • S. Sundaram
    • 1
  1. 1.Department of PhysicsUniversity of South FloridaTampaUSA

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