Applied Physics A

, Volume 53, Issue 4, pp 324–329

Growth and melting behaviour of thin in films on Ge(100)

  • G. Krausch
  • T. Detzel
  • H. Bielefeldt
  • R. Fink
  • B. Luckscheiter
  • R. Platzer
  • U. Wöhrmann
  • G. Schatz
Surfaces And Maltilagers

Abstract

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed γγ angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature Tm as well as a strong supercooling of the films is observed. The electric field gradient for 111In(111Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.

PACS

64.70.Dv 68.55.Jk 76.80.+y 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    J. Knall, S.A. Barnett, J.E. Sundgren, J.E. Greene: Surf. Sci 209, 314 (1989) and references thereinGoogle Scholar
  2. 2.
    D.H. Rich, T. Miller, T.C. Chiang: Phys. Rev. B41, 3004 (1990)Google Scholar
  3. 3.
    R.H. Willens, A. Kornblit, L.R. Testardi, S. Nakahara: Phys. Rev. B25, 290 (1982)Google Scholar
  4. 4.
    R.P. Bergman, A.E. Curzon: Can. J. Phys. 52, 923 (1974)Google Scholar
  5. 5.
    G. Schatz, X.L. Ding, R. Fink, G. Krausch, B. Luckscheiter, R. Platzer, U. Wöhrmann, R. Wesche: Hyperfine Interactions 60, 975 (1990) and references thereinGoogle Scholar
  6. 6.
    T. Klas, J. Voigt, W. Keppner, R. Wesche, G. Schatz: Phys. Rev. Lett. 57, 1068 (1986)Google Scholar
  7. 7.
    W. Keppner, R. Wesche, T. Klas, J. Voigt, G. Schatz: Thin Solid Films 143, 201 (1986)Google Scholar
  8. 8.
    J. Voigt, X.L. Ding, R. Fink, G. Krausch, B. Luckscheiter, R. Platzer, U. Wöhrmann, G. Schatz: Appl. Phys. A51, 317 (1990)Google Scholar
  9. 9.
    F. Jona: IBM J. Res. Dev. 9, 375 (1965)Google Scholar
  10. 10.
    T. Klas, R. Fink, G. Krausch, R. Platzer, J. Voigt, R. Wesche, G. Schatz: Surf. Sci. 216, 270 (1989)Google Scholar
  11. 11.
    S. Hu: In Atomic Diffusion in Semiconductors, ed. by D. Shaw (Plenum, New York 1973) Chap. 5, p. 336Google Scholar
  12. 12.
    W.R. Tyson, W.A. Miller: Surf. Sci. 62, 267 (1977)Google Scholar
  13. 13.
    J. Christiansen, P. Heubes, R. Keitel, W. Loeffler, W. Sandner, W. Witthuhn: Z. Phys. B24, 177 (1976)Google Scholar
  14. 14.
    W.E. Evenson, J.A. Gardner, R. Wang, H.-T. Su, A.G. McKale: Hyperfine Interactions (to be published)Google Scholar
  15. 15.
    M. Takagi: J. Phys. Soc. Jpn. 9, 359 (1954)Google Scholar
  16. 16.
    M. Takagi: J. Phys. Soc. Jpn. 55, 3484 (1986)Google Scholar

Copyright information

© Springer-Verlag 1991

Authors and Affiliations

  • G. Krausch
    • 1
  • T. Detzel
    • 1
  • H. Bielefeldt
    • 1
  • R. Fink
    • 1
  • B. Luckscheiter
    • 1
  • R. Platzer
    • 1
  • U. Wöhrmann
    • 1
  • G. Schatz
    • 1
  1. 1.Fakultät für PhysikUniversität KonstanzKonstanzFed. Rep. Germany

Personalised recommendations