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Applied Physics A

, Volume 54, Issue 1, pp 103–105 | Cite as

MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy

  • R. Bergmann
  • E. Czech
  • I. Silier
  • N. Nagel
  • E. Bauser
  • H. J. Queisser
  • R. P. Zingg
  • B. Höfflinger
Rapid Communications

Abstract

We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.

PACS

68.55 73.40T 85.30D 

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Copyright information

© Springer-Verlag 1992

Authors and Affiliations

  • R. Bergmann
    • 1
  • E. Czech
    • 1
  • I. Silier
    • 1
  • N. Nagel
    • 1
  • E. Bauser
    • 1
  • H. J. Queisser
    • 1
  • R. P. Zingg
    • 2
  • B. Höfflinger
    • 2
  1. 1.Max-Planck-Institut (MPI) für FestkörperforschungStuttgart 80Fed. Rep. Germany
  2. 2.Institut für Mikroelektronik Stuttgart (IMS)Stuttgart 80Fed. Rep. Germany

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