Applied Physics A

, Volume 55, Issue 2, pp 176–179 | Cite as

Aluminium oxide thin films prepared by plasma-enhanced chemical vapour deposition

  • Yu.-Wen Zhao
  • H. Suhr
Surfaces And Multilayers
Received:
Accepted:

Abstract

Thin films of aluminium oxide have been deposited on glass, quartz, Si(100), steel, nickel, and aluminium by plasma-enhanced chemical vapour deposition (PECVD) using aluminium acetylacetonate (Al(acac)3) as precursor. The deposits are hard (up to 2370 HK) and show good adherence to the substrates. The influence of various experimental parameters on deposition rate, film composition and hardness has been studied. The bias turned out to be the most effective parameter.

PACS

81.15.Gh 52.90.+z 68.55.−a 
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Copyright information

© Springer-Verlag 1992

Authors and Affiliations

  • Yu.-Wen Zhao
    • 1
  • H. Suhr
    • 1
  1. 1.Department of Organic ChemistryUniversity of TübingenTübingenFed. Rep. Germany

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