Deposition of copper oxide (Cu2O, CuO) thin films at high temperatures by plasma-enhanced CVD
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Copper-oxide films are deposited by plasma-enhanced CVD using copper acetylacetonate as a precursor. The influence of various experimental parameters on deposition rate, film composition and resistivity have been studied. The substrate temperature and the bias are the parameters which affect these properties the most. An increase of the substrate temperature changes the phases of the deposit from Cu2O-CuO over Cu2O to Cu. At temperatures ≧500° C the deposition rates are high but the films consist mainly of metallic Cu. A negative bias enhances the deposition rate only slightly but has a strong effect on the film composition and can completely balance the oxygen deficiency. At a bias of −120 V the films consist of pure CuO even at temperatures ≧500° C.
PACS81.15Gh 52.90+z 68.55+b
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