Surfactant-mediated molecular beam epitaxy of high-quality (111)B-GaAs
Rapid Communication
Received:
Accepted:
Abstract
We present a novel approach to the molecular beam epitaxy of [111]-oriented GaAs. Surface-segregating In employed as an isoelectronic surfactant allows us to achieve mirror-like (111) GaAs surfaces within a wide range of growth conditions. Scanning electron and atomic force microscopy confirm the excellent morphology of the resulting samples. High-resolution X-ray diffraction shows the incorporation of In into the films to be negligible. Finally, we demonstrate a 10 Å-In0.2Ga0.8As/300 Å-GaAs superlattice based on surfactant-grown GaAs with a photoluminescence linewidth as narrow as 4.2 meV.
PACS
68.55.Bd 61.16.Di 61.10.LxPreview
Unable to display preview. Download preview PDF.
References
- 1.L.F. Luo, R. Beresford, W.I. Wang, E.E. Mendez: Appl. Phys. Lett. 54, 2133 (1989)Google Scholar
- 2.W. Batty, U. Ekenberg, A. Ghiti, E.P. O'Reilly: Semicond. Sci. Technol. 4, 904 (1989)Google Scholar
- 3.C. Mailhiot, D.L. Smith: Phys. Rev. B 35, 1242 (1987)Google Scholar
- 4.E.A. Caridi, T.Y. Chang, K.W. Goossen, L.F. Eastman: Appl. Phys. Lett. 56, 659 (1990)Google Scholar
- 5.A.Y. Cho: J. Appl. Phys. 41, 2780 (1970)Google Scholar
- 6.J.M. Ballingall, C.E.C. Wood: Appl. Phys. Lett. 41, 947 (1982)Google Scholar
- 7.T. Hayakawa, M. Kondo, K. Takahashi, T. Suyama, S. Yamamoto, T. Hijikata: Appl. Phys. Lett. 51, 1705 (1987)Google Scholar
- 8.P. Chen, K.C. Rajkumar, A. Madhukar: Appl. Phys. Lett. 58, 1771 (1991)Google Scholar
- 9.Y. Takano, Y. Kanaya, T. Torihata, K. Pak, H. Yonezu: J. Cryst. Growth 102, 341 (1990)Google Scholar
- 10.M. Copel, M.C. Reuter, E. Kaxiras, R.M. Tromp: Phys. Rev. Lett. 63, 632 (1989)Google Scholar
- 11.J.M. Moison, C. Guille, F. Houzay, F. Barthe, M. Van Rompay: Phys. Rev. B 40, 6149 (1989)Google Scholar
- 12.E. Tournié, O. Brandt, K. Ploog: Appl. Phys. Lett. 60, 2877 (1992)Google Scholar
- 13.O. Brandt, L. Tapfer, K. Ploog, R. Bierwolf, M. Hohenstein, F. Phillipp, H. Lage, A. Heberle: Phys. Rev. B 44, 8043 (1991)Google Scholar
- 14.J. Massies, N. Grandjean, V.H. Etgens: Appl. Phys. Lett. 61, 99 (1992)Google Scholar
Copyright information
© Springer-Verlag 1993