Applied Physics A

, Volume 54, Issue 6, pp 556–559

Alloying behavior at the AuGeNi/GaSb interface: Photoemission studies of the effects of annealing temperature

  • W. S. Tse
  • R. H. Chen
  • C. S. Ares Fang
  • J. R. Chen
Surfaces And Multilayers

Abstract

An ultra-thin AuGeNi alloy (84%/12%/4% by weight) overlayer of 5 nm was evaporated onto Te-doped n-type (100) oriented GaSb substrates. Samples were annealed in ultra-high vacuum (UHV), with a base pressure of 10−10 Torr at either 300°C, 500°C, or 700°C for 12 h. The reacted interface was then revealed by Ar ion sputter-depth profiling. The highest percentage of Ge in the deep interface region was observed for the sample annealed at 500°C. Annealing at 500°C also leads to a uniform distribution of Ga, Sb, and Au concentrations. Results show that virtually all Au, Ge, and Ni evaporate away after annealing at 700°C. Au-based AuGa alloy formation was indicated by the shifts of Au 4f core-levels and the metallic Ga 3d peak. The small variation of Au 4f core-levels with sputtering for samples annealed at 500°C is the evidence of AuGa uniform alloying from the surface to the interface. It has been, therefore, concluded that annealing at 500°C forms a more uniform distribution of cluster size throughout the interface than annealing at 300°C or 700°C.

PACS

73.40 82.80 85.30 

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Copyright information

© Springer-Verlag 1992

Authors and Affiliations

  • W. S. Tse
    • 1
  • R. H. Chen
    • 1
  • C. S. Ares Fang
    • 1
  • J. R. Chen
    • 2
  1. 1.Institute of PhysicsAcademia SinicaTaipeiTaiwan, Rep. of China
  2. 2.Department of Materials Science and EngineeringNational Tsingu-Hua UniversityHsinchuTaiwan, Rep. of China

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