Formation of oriented structures by laser heating of solid-solid interfaces
Surfaces And Multilayers
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Abstract
Oriented semiconductor structures are produced by laser irradiation of transparent-dielectric—semiconductor interfaces, provided the laser beam intensity is sufficient to melt the semiconductor. The orientation of the structure coincides with that of the initial semiconductor, and does not depend on the orientation of the transparent substrate. Monocrystalline stripes (30 μm width) of GaAs and of Ge are formed on sapphire and glass.
PACS
44.30 61.50 78.30Preview
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