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Applied Physics A

, Volume 53, Issue 3, pp 222–226 | Cite as

Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers

  • R. Fabbri
  • M. Servidori
  • S. Solmi
  • S. Frabboni
  • G. Ottaviani
  • R. Tonini
  • R. Canteri
Solids And Materials

Abstract

30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p+/n shallow junctions with good electrical characteristics.

PACS

61.80 68.55 

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References

  1. 1.
    S. Solmi, M. Servidori: In: Ion Implantation in Semiconductors, ed. by D. Stievenard, J.C. Bourgoin (Trans. Tech., Switzerland 1988) p. 65Google Scholar
  2. 2.
    F.F. Morehead, Jr., B.L. Crowder: Radiat. Eff. 6, 27 (1970)Google Scholar
  3. 3.
    F. Cembali, M. Servidori, E. Landi, S. Solmi: Phys. Status Solidi A94, 315 (1986)Google Scholar
  4. 4.
    F. Cembali, M. Servidori, A. Zani: Solid-State Electron. 28, 933 (1985)Google Scholar
  5. 5.
    P.H. Dederichs: J. Phys. F3, 471 (1973)Google Scholar
  6. 6.
    J.A. Lambert, P.S. Dobson: Philos. Mag. A44, 1043 (1981)Google Scholar
  7. 7.
    A.M. Mazzone: Phys. Status Solidi A95, 149 (1986)Google Scholar

Copyright information

© Springer-Verlag 1991

Authors and Affiliations

  • R. Fabbri
    • 1
  • M. Servidori
    • 1
  • S. Solmi
    • 1
  • S. Frabboni
    • 2
  • G. Ottaviani
    • 2
  • R. Tonini
    • 2
  • R. Canteri
    • 3
  1. 1.CNR-Istituto LAMELBolognaItaly
  2. 2.Dipartimento di FisicaUniversità di ModenaModenaItaly
  3. 3.Divisione Scienza dei MaterialiIRSTPovoItaly

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