A model for the occurrence of transient negative photoconductivity in silicon doped with gold
Solids And Materials
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Abstract
A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms has been investigated. On the basis of the trapping of photo-excited carriers into two deep levels of gold atoms, a model for the occurrence of transient negative photoconductivity is proposed and related qualitatively to some experimental results.
PACS
72.40 72.20 85.30Preview
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