Applied Physics A

, Volume 55, Issue 4, pp 313–316 | Cite as

Hydrogen-related donor in silicon crystals grown in a hydrogen atmosphere

  • Lei Zhong
  • Zhanguo Wang
  • Shouke Wan
  • Jinbin Zhu
  • F. Shimura
Solids And Materials
Received:
Accepted:

Abstract

Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 meV below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

PACS

71.55.Ht 61.80.Hg 61.70.Yq 
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Copyright information

© Springer-Verlag 1992

Authors and Affiliations

  • Lei Zhong
    • 1
  • Zhanguo Wang
    • 1
  • Shouke Wan
    • 1
  • Jinbin Zhu
    • 2
  • F. Shimura
    • 3
  1. 1.Institute of SemiconductorsChinese Academy of SciencesBeijingPR China
  2. 2.Laboratory for Infrared PhysicsChinese Academy of SciencesShanghaiPR China
  3. 3.Department of Materials Science and EngineeringNorth Carolina State UniversityRaleighUSA

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