The effects of oxygen on diamond synthesis by hot-filament chemical vapor deposition

  • Yoon-Kee Kim
  • Jae-Han Jung
  • Jai-Young Lee
  • Hyo-Jun Ahn
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Abstract

The effects of oxygen addition on the synthesis of diamond are extensively studied by using the hot-filament chemical vapor deposition (HFCVD) method, in which it is simple and easy to control the deposition parameters independently. Diamond films are deposited on silicon wafers under the conditions of substrate temperature 530–950 ‡C; total reaction pressure 700–8000 Pa; and methane concentration 0.4–2.4% in both CH4–H2 and CH4–H2–O2 systems.

At deposition conditions of low substrate temperature, high CH4 concentration or high total pressure, soot-like carbon and/or graphite are deposited without oxygen addition. When even a small amount of oxygen (about 0.6%) is added, well-faceted diamond films are observed in scanning electron microscopy micrographs and a sharp diamond peak in the Raman spectra appears. The range of deposition parameters for high-quality diamond syntheses are extended by oxygen addition (low substrate temperature, high methane concentration and high reaction pressure).

Keywords

Silicon Wafer Reaction Pressure Methane Concentration Diamond Film Deposition Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • Yoon-Kee Kim
    • 1
  • Jae-Han Jung
    • 1
  • Jai-Young Lee
    • 1
  • Hyo-Jun Ahn
    • 2
  1. 1.Department of Materials Science and EngineeringKorea Advanced Institute of Science and TechnologyYusung-GuKorea
  2. 2.Department of Metallurgical Materials EngineeringGyeongsang National UniversityChinjuKorea

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