Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP

  • C. S. Ma
  • P. W. Chan
  • V. C. Lo
  • C. W. Ong
  • S. P. Wong
Papers

DOI: 10.1007/BF00186188

Cite this article as:
Ma, C.S., Chan, P.W., Lo, V.C. et al. J Mater Sci: Mater Electron (1994) 5: 215. doi:10.1007/BF00186188

Abstract

The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A appeared in both undoped and doped samples, but it disappeared after RTA for all the samples. It is suggested that band A is due to the formation of a complex involving VIn with residual impurities. The disappearance of band A after RTA is concomitant with the appearance of bands B, C and D. The existence of band B is attributed to the complex formation of VP with residual impurities. Band C was observed after the annealing process both in undoped and lightly-tin-doped samples and is believed to be due to the formation of VP single point defects. Band D was only observed in heavily doped samples and it is believed to be the effect of InP antisite defects.

Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • C. S. Ma
    • 1
  • P. W. Chan
    • 1
  • V. C. Lo
    • 1
  • C. W. Ong
    • 1
  • S. P. Wong
    • 2
  1. 1.Department of Applied PhysicsHong Kong PolytechnicHung HomHong Kong
  2. 2.Department of Electronic EngineeringThe Chinese University of Hong KongShatinHong Kong

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