Plasma-enhanced chemical vapour deposited silicon-nitride films for interface studies

  • S. Ghosh
  • D. N. Bose
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Abstract

Silicon nitride (SiN x ) films of varying stoichiometry (x=1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 ‡C by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RBS) measurements. Optical, electrical and interface characterization were carried out for the films. It was observed that nitrogen-rich films (x=1.63) gave the best electrical properties and the lowest interface state density, which was 1.1 × 1011 eV−1 cm−2. The resistivity and breakdown field of these films were 5.1 × 1013 Ω cm and 1.5 × 106 V cm−1, respectively.

Keywords

Nitride Chemical Vapour Deposition Vapour Deposition Silicon Substrate Silicon Nitride 
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References

  1. 1.
    A. K. SINHA, H. J. LEVINSTEIN, T. E. SMITH, G. QUINTANA and S. E. HASZKO, J. Electrochem. Soc. 125 (1978) 601.Google Scholar
  2. 2.
    W. KERN and R. S. ROSLER, J. Vac. Sci. Technol. 14 (1977) 1082.Google Scholar
  3. 3.
    H. DUN, P. PAN, F. R. White and R. W. DOUSE, J. Electrochem. Soc. 128 (1981 1555.Google Scholar
  4. 4.
    W. A. P. CLAASEN, W. G. J. N. VALKENBURG, M. F. C. WILLEMSEN and W. M. V. D. WIJGERT, ibid. J. Electrochem. Soc. 132 ( 893.Google Scholar
  5. 5.
    W. A. P. CLAASEN, W. G. J. NVALKENBURG, F. H. P. M. HABRAKEN and Y. TAMMINGA, ibid. J. Electrochem. Soc. 130 (1983) 24Google Scholar
  6. 6.
    K. M. MAR and G. M. SAMUELSON, Solid State Technol. 23 (1980) 137.Google Scholar
  7. 7.
    J. F. VERWEY, Adv. Electron. Electron. Phys. 41 (1976) 249.Google Scholar
  8. 8.
    R. SCHORNER and R. HEZEL, IEEE Trans. Electron Dev. 28 (1981) 1466.Google Scholar
  9. 9.
    W. S. LAU, S. J. FONASH and J. KANICKI, J. Appl. Phys. 66 (1989) 2765.Google Scholar
  10. 10.
    H. ARAI, K. TANAKA and S. KOHDA, J. Vac. Sci. Technol. B 6 (1988) 831.Google Scholar
  11. 11.
    A. SANJOH, N. IKEDA, K. KOMAKI and A. SHINTANI, J. Electrochem. Soc. 137 (1990) 2974.Google Scholar
  12. 12.
    P. E. BAGNOLI, A. PICCIRILLO, A. L. GOBBI and R. GIANNETTI, Appl. Surf. Sci. 52 (1991) 45.Google Scholar
  13. 13.
    M. M. GURAYA, H. ASCOLANI, G. ZAMPIERI, J. I. CISNEROS, J. H. DIAS DA SILVA and M. P. CANTÃO, Phys. Rev. B 42 (1990) 5677.Google Scholar
  14. 14.
    W. CHU, J. W. MAYER and M. NICOLET, in Backscattering spectrometry (Academic Press, London, 1978).Google Scholar
  15. 15.
    J. ROBERTSON, Phil. Mag. B 63 (1991) 47.Google Scholar
  16. 16.
    L. MARTIN-MORENO, E. MARTINEZ, J. A. VERGÉS and F. YNDURAIN, Phys. Rev. B 35 (1987) 9683.Google Scholar
  17. 17.
    J. ROBERTSON and M. J. POWELL, Appl. Phys. Lett. 44 (1984) 415.Google Scholar
  18. 18.
    P. BHATTACHARYA, PhD thesis, Indian Institute of Technology, Kharagpur, India (1992).Google Scholar
  19. 19.
    H. J. STEIN, V. A. Wells and R. E. HAMPY, J. Electrochem. Soc. 126 (1979) 1750.Google Scholar
  20. 20.
    A. MORIMOTO, I. KOBAYASHI, M. KUMEDA and T. SHIMIZU, Jpn. J. Appl. Phys. 25 (1986) L752.Google Scholar
  21. 21.
    R. C. BUDHANI, R. F. BUNSHAH and P. A. FLINN, Appl. Phys. Lett. 52 (1988) 284.Google Scholar

Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • S. Ghosh
    • 1
  • D. N. Bose
    • 1
  1. 1.Semiconductor DivisionMaterials Science Centre, Indian Institute of TechnologyKharagpurIndia

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