Tribology Letters

, Volume 2, Issue 2, pp 199–206 | Cite as

On the electromechanical effect in Si and Ge

  • E. Busch
  • D. Haneman
Article
Received:
Accepted:

Abstract

An extensive study has been carried out of the effect of electrical current on the room-temperature indentation hardness and indentation damage area of Si and Ge. It is found that the spread of results is such that sample numbers of less than about 50–100 can give misleading conclusions. This explains the large variations in results in the literature. It is concluded that if any electromechanical effect exists, it is slight. The measured Vickers hardness has a range of at least 9.2 to 13.7 GPa for Ge and at least 10.4 to 15.3 GPa for Si.

Keywords

electromechanical effect hardness germanium silicon indentation damage 
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References

  1. [1]
    D.G. Li, N.S. McAlpine and D. Haneman, Surf. Sci. 281 (1993) L315; 303 (1994) 171.Google Scholar
  2. [2]
    D.G. Li, D. Haneman, N.S. McAlpine and B. Chen, Phys. Rev. Lett. 73 (1994) 1170.Google Scholar
  3. [3]
    E. Busch, N.S. McAlpine and D. Haneman, Appl. Phys. Lett. 68 (1996).Google Scholar
  4. [4]
    J.H. Westbrook and J.J. Gilman, J. Appl. Phys. 33 (1962) 2360.Google Scholar
  5. [5]
    G.P. Upit, S.A. Varchenya and I.P. Spalvin, Phys. Stat. Sol. 15 (1966) 617.Google Scholar
  6. [6]
    B.P. Lemke and D. Haneman, Phys. Rev. B 17 (1978) 1893.Google Scholar
  7. [7]
    A.B. Chen, A. Sher and W.T. Yost, in: The Mechanical Properties of Semiconductors, eds. K.T. Faber and K. Malloy (Academic Press, New York, 1992) p. 2.Google Scholar
  8. [8]
    I.V. Gridneva, Y.V. Milman and V.I. Trefilov, Phys. Stat. Sol. (a) 14 (1972) 177.Google Scholar
  9. [9]
    G.A. Wolff, L. Toman Jr., N.J. Field and J.C. Clarke, Proc. Int. Conf. Semicon., Garmisch-Partenkirchen 1956 (Vieweg, Braunschweig, 1958), quoted in Landolt-Börnstein Tables.Google Scholar
  10. [10]
    R. Berriche, Scr. Met. Mat. 32 (1995) 617.Google Scholar
  11. [11]
    D.R. Clarke, in: The Mechanical Properties of Semiconductors, eds. K.T. Faber and K. Malloy (Academic Press, New York, 1992) p. 80.Google Scholar
  12. [12]
    D.G. Li, N.S. McAlpine and D. Haneman, Appl. Surf. Sci. 65/66 (1993) 553.Google Scholar
  13. [13]
    D.L. Callahan and J.C. Morris, J. Mater. Res. 7 (1992) 1614.Google Scholar

Copyright information

© J.C. Baltzer AG, Science Publishers 1996

Authors and Affiliations

  • E. Busch
    • 1
  • D. Haneman
    • 1
  1. 1.School of Physics, University of New South WalesSydneyAustralia

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