Journal of Low Temperature Physics

, Volume 32, Issue 3–4, pp 469–479 | Cite as

Phonon reflection at a silicon-3He interface

  • J. T. Folinsbee
  • J. P. Harrison

The reflection of heat pulses at an interface between the (111) surface of silicon and liquid 3He has been measured for heat pulse temperatures from 1.4 to 9K. The measurements were made with the silicon-helium temperature equal to 0.4 or 1.8K. The detectors were cadmium or aluminum superconducting bolometers. Longitudinal and transverse phonons incident nearly perpendicularly on the surface had reflection coefficients of 1 and 0.8, respectively, independent of pulse temperature. Transverse phonons incident at a large angle and diffusely reflected had reflection coefficients dropping from 0.7 at 1.5K to 0.4 at 9K. The results are in broad agreement with previous measurements on solid-4He interfaces obtained from heat pulse and monochromatic phonon experiments.


Aluminum Silicon Reflection Cadmium Magnetic Material 
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Copyright information

© Plenum Publishing Corporation 1978

Authors and Affiliations

  • J. T. Folinsbee
    • 1
  • J. P. Harrison
    • 1
  1. 1.Physics DepartmentQueen's UniversityKingstonCanada

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