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Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level

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Abstract

We summarize a large body of experimental and theoretical work, especially in Si-doped GaAs and Al x Ga1-x As, regarding the bistability of theDX center. There is good evidence that theDX center is just the simple donor, and that each donor can exist in either of two distinct lattice configurations, each with its own spectrum of bound electronic states. Generally, the substitutional configuration binds electrons in shallow hydrogenic states, but many observations also indicate a deep (highly localized) state ofA 1 symmetry. These states are to be distinguished from bound states of a lattice-distorted configuration, the lowest-lying of which is the deepDX level. The occupation of theDX level in thermal equilibrium with the states of the conduction band can be reasonably well modeled by assuming thatDX is either a one-electron or a two-electron state, and we discuss the reasons for this ambiguity. However, we then show that such thermal equilibrium results are consistent with thermal capture and emission kineticsonly if we assume thatDX is a two-electron state. Our results thus support the model of Chadi and Chang in which the distorted configuration is stabilized by capture of two electrons. In other words, the defect exhibits negative effective correlation energy (negativeU).

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  1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA

    T. N. Theis, P. M. Mooney & B. D. Parker

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Theis, T.N., Mooney, P.M. & Parker, B.D. Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level. J. Electron. Mater. 20, 35–48 (1991). https://doi.org/10.1007/BF02651963

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