Abstract
We report the enhanced electrical performance of a MoS2 field-effect transistor (FET) by using a contact with a layered CrPS4. Our transport measurements revealed that MoS2 channel with CrPS4 junction showed higher mobility of 33.9 cm2/Vs than that without CrPS4 junction on SiO2/Si substrate. We also fabricated a MoS2 FET with a top gate insulator, CrPS4, which showed low leakage current of 10−11 A and high on/off ratio of 105. In a dual-gated FET with SiO2 bottom gate insulator and CrPS4 top gate insulator, much decreased sub-threshold swing of 0.70 V/dec was obtained.
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Acknowledgments
This work was supported by National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIP) (No. 2013R1A3A2042120), the Nano Material Technology Development Program through the NRF funded by the MSIP (No. 2016M3A7B4909668), and an Electronics and Telecommunications Research Institute (ETRI) grant funded by the Korean government (18ZB1800, Development of Neuromorphic Hardware by using High Performance Memristor Device based on Ultra-thin Film Structure). This work at the IBS CCES and SNU was supported by the Institute for Basic Science (IBS) in Korea (Grant No. IBS-R009-G1).
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Shin, M., Lee, M.J., Lee, J.H. et al. Electrical Properties of MoS2 Field-Effect Transistors in Contact with Layered CrPS4. J. Korean Phys. Soc. 76, 731–735 (2020). https://doi.org/10.3938/jkps.76.731
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DOI: https://doi.org/10.3938/jkps.76.731