Abstract
The optical and electronic properties of staggered ZnO/ZnO1−xSx-ZnO1−ySy/ZnO (for x > y) bluish-green light-emitting diodes with quantum well (QW) structures are investigated using the multiband effective mass theory. The obtained results are compared with those of conventional ZnO1−xSx/ZnO QW structures, and the staggered QW structures are found to have a comparatively larger optical matrix, showing a substantial, yet gradual, reduction in the internal field effect. Thus, the staggered ZnO/ZnO1−xSx-ZnO1−ySy/ZnO QW structure design leads to a significantly higher spontaneous emission compared to that of conventional ZnO1−xSx/ZnO QW structures. This analysis indicates the potential of using a staggered QW structure for high-efficiency ZnO-based bluish-green LEDs.
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18 February 2020
The present address of S. Kumar has been added.
18 February 2020
The present address of S. Kumar has been added.
References
J. Shakya et al., Appl. Phys. Lett. 86, 091107 (2005).
J. Li, J. Y. Lin and H. X. Jiang, Appl. Phys. Lett. 88, 171909 (2006).
Y. A. Chang et al., Jpn. J. Appl. Phys. Part 1 44, 7916 (2005).
P. T. Barletta et al., Appl. Phys. Lett. 90, 151109 (2007).
K. S. Kim et al., Appl. Phys. Lett. 96, 091104 (2010).
S. Choi et al., Appl. Phys. Lett. 96, 221105 (2010).
C. H. Kuo et al., IEEE Trans. Electron Devices 50, 535 (2003).
Y. K. Su et al., IEEE Electron Device Lett. 26, 891 (2005).
C. F. Shen et al., IEEE Photonics Technol. Lett. 19, 780 (2007).
T. Onuma et al., Appl. Phys. Lett. 91, 181903 (2007).
C. E. Lee et al., IEEE Photonics Technol. Lett. 20, 184 (2008).
F. Bernardini, Nitride Semiconductor Devices: Principles and Simulation, edited by J. Piprek (Wiley, New York, 2007).
A. Thamm et al., Phys. Rev. B 61, 16025 (2000).
A. E. Romanov, T. J. Baker, S. Nakamura and J. S. Speck, J. Appl. Phys. 100, 023522 (2006).
P. Waltereit, O. Brandt and A. Trampert, Nature 406, 865 (2000).
S. F. Chichibu et al., Appl. Phys. Lett. 73, 2006 (1998).
V. Y. Davydov et al., Phys. Status Solidi 229, r1 (2002).
S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996).
S. H. Park and S. L. Chuang, Appl. Phys. Lett. 72, 3103 (1998).
D. Ahn, Prog. Quantum Electron. 21, 249 (1997).
S. H. Park, S. L. Chuang, J. Minch and D. Ahn, Semicond. Sci. Technol. 15, 203 (2000).
F. Bernardini and V. Fiorentini, Phys. Status Solidi B 216, 391 (1999).
Acknowledgments
The Basic Science and Research Program supported this research through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (2016R1D1A1B04935798, 2018 R1D1A1B07051095, 2018R1D1A1B07050237, 2016R1A6 A1A03012877, and 2018R1D1A1B07042028).
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Magotra, V.K., Jeon, H.C., Kumar, S. et al. Electronic and Optical Properties of Staggered ZnO/ZnO1−xSx-ZnO1−ySy/ZnO Quantum Wells for Bluish-Green Light-Emitting Diodes. J. Korean Phys. Soc. 75, 899–902 (2019). https://doi.org/10.3938/jkps.75.899
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DOI: https://doi.org/10.3938/jkps.75.899