Abstract
Using angle-resolved photoemission spectroscopy, we studied the electronic structure of graphene grown on a Ge (110) wafer, where a single-crystal single-layer graphene was recently grown using chemical vapor deposition. The growth mechanism of the single-layer single-crystal graphene was related to the hydrogen termination of the Ge (110) surface. To further understand the growth mechanism, we measured the electronic structure of the graphene-covered Ge (110) wafer in a vacuum as a function of the increasing temperature, which led to a deintercalation of the hydrogen atoms. Furthermore, we measured the electronic structure after the reintercalation of the hydrogen atoms between the Ge substrate and graphene. These findings show that hydrogen is intercalated between the Ge substrate and graphene after the growth of graphene using chemical vapor deposition.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo and R. S. Ruoff, Science 324, 1312 (2009).
X. Li, C. W. Magnuson, A. Venugopal, J. An, J. W. Suk, B. Han, M. Borysiak, W. Cai, A. Velamakanni, Y. Zhu, L. Fu, E. M. Vogel, E. Voelkl, L. Colombo and R. S. Ruoff, Nano Lett. 10, 4328 (2010).
N. Petrone, C. R. Dean, I. Meric, A. M. van der Zande, P. Y. Huang, L. Wang, D. Muller, K. L. Shepard and J. Hone, Nano Lett. 12, 2751 (2012).
J. H. Lee, E. K. Lee, W. J. Joo, Y. Jang, B. S. Kim, J. Y. Lim, S. H. Choi, S. J. Ahn, J. R. Ahn, M. H. Park, C. W. Yang, B. L. Choi, S. W. Hwang and D. Whang, Science 344, 286 (2014).
Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li and T. W. Lin, Adv. Mater. 24, 2320 (2012).
Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan and J. Lou, Small 8, 966 (2012).
M. R. Laskar, L. Ma, S. Kannappan, P. S. Park, S. Krishnamoorthy, D. N. Nath, W. Lu, Y. Y. Wu and S. Rajan, Appl. Phys. Lett. 102, 252108 (2013).
W. Wu, D. De, S. C. Chang, Y. N. Wang, H. B. Peng, J. M. Bao and S. S. Pei, Appl. Phys. Lett. 102, 142106 (2013).
Q. Yu, J. Lian, S. Siriponglert, H. Li, Y. P. Chen and S-S. Pei, Appl. Phys. Lett. 93, 113103 (2008).
A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009).
C. Riedl, C. Coletti and U. Starke, J. Phys. D: Appl. Phys. 43, 374009 (2010).
H. Hibino, S. Tanabe, S. Mizuno and H. Kageshima, J. Phys. D: Appl. Phys. 45, 154008 (2012).
S. Marchini, S. Günther and J. Wintterlin, Phys. Rev. B 76, 075429 (2007).
J. Coraux, A. T. N’Diaye, C. Busse and T. Michely, Nano Lett. 8, 565 (2008).
J. Avila, I. Razado, S. Lorcy, R. Fleurier, E. Pichonat, D. Vignaud, X. Wallart and M. C. Asensio, Sci. Rep. 3, 2439 (2013).
L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Oellers, F. Haupt, K. Watanabe, T. Taniguchi, B. Beschoten and C. Stampfer, Sci. Adv. 1, e1500222 (2015).
J. D. Caldwell, T. J. Anderson, J. C. Culbertson, G. G. Jernigan, K. D. Hobart, F. J. Kub, M. J. Tadjer, J. L. Tedesco, J. K. Hite, M. A. Mastro, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell and D. K. Gaskill, ACS Nano, 4, 1108 (2010).
J. Kim, H. Park, J. B. Hannon, S. W. Bedell, K. Fogel, D. K. Sadana and C. Dimitrakopoulos, Science 342, 833 (2013).
L. B. Gao, W. C. Ren, H. L. Xu, L. Jin, Z. X. Wang, T. Ma, L. P. Ma, Z. Y. Zhang, Q. Fu, L. M. Peng, X. H. Bao and H. M. Cheng, Nat. Commun. 3, 699 (2012).
S. Choubak, P. L. Levesque, E. Gaufres, M. Biron, P. Desjardins and R. Martel, J. Phys. Chem. C 118, 21532 (2014).
J. Dai, D. Wang, M. Zhang, T. Niu, A. Li, M. Ye, S. Qiao, G. Ding, X. Xie, Y. Wang, P. K. Chu, Q. Yuan, Z. Di, X. Wang, F. Ding and B. I. Yakobson, Nano Lett. 16, 3160 (2016).
P. C. Rogge, M. E. Foster, J. M. Wofford, K. F. McCarty, N. C. Bartelt and O. D. Dubon, MRS Commun. 5, 539 (2015).
L. Gan and Z. Luo, ACS Nano 7, 9480 (2013).
W. Kern, J. Electrochem. Soc. 137, 1887 (1990).
S. W. King, R. F. Davis and R. J. Nemanich, Surf. Sci. 603, 3104 (2009).
S. Shimokawa, A. Namiki, M. N-Gamo and T. Ando, J. Chem. Phys. 113, 6916 (2000).
J. E. Crowell and G. Lu, J. Electron. Spectrosc. Relat. Phenom. 54/55, 1045 (1990).
C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov and U. Starke, Phys. Rev. Lett. 103, 246804 (2009).
M. Niwano, M. Terashi and J. Kuge, Surf. Sci. 420, 6 (1999).
M. Dürr and U. Höfer, Surf. Sci. Rep. 61, 465 (2006).
M. Dürr, Z. Hu, A. Biedermann, U. Höfer and T. F. Heinz, Phys. Rev. Lett. 88, 046104 (2002).
F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H. B. Weber and T. Seyller, Appl. Phys. Lett. 99, 122106 (2011).
N. Sieber, B. F. Mantel, T. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor and D. Schmeiβer, Appl. Phys. Lett. 78, 1216 (2001).
K. V. Emtsev, A. A. Zakharov, C. Coletti, S. Forti and U. Starke, Phys. Rev. B 84, 125423 (2011).
E. Aktürk, C. Ataca and S. Ciraci, Appl. Phys. Lett. 96, 123112 (2010).
D. Ioannis and M. Antonino La, Appl. Phys. Express 4, 125101 (2011).
J. Tesch, F. Paschke, M. Fonin, M. Wietstruk, S. Bottcher, R. J. Koch, A. Bostwick, C. Jozwiak, E. Rotenberg, A. Makarova, B. Paulus, E. Voloshina and Y. Dedkov, Nanoscale 10, 6088 (2018).
F. Theilmann, R. Matzdorf, G. Meister and A. Goldmann, Phys. Rev. B 56, 3632 (1997).
F. Theilmann, R. Matzdorf and A. Goldmann, Surf. Sci. 420, 33 (1999).
K. R. Knox, A. Locatelli, M. B. Yilmaz, D. Cvetko, T. O. Menteş, M. Á. Ni˜no, P. Kim, A. Morgante and R. M. Osgood, Phys. Rev. B 84, 115401 (2011).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ahn, S.J., Kim, H.W., Khadka, I.B. et al. Electronic Structure of Graphene Grown on a Hydrogen-terminated Ge (110) Wafer. J. Korean Phys. Soc. 73, 656–660 (2018). https://doi.org/10.3938/jkps.73.656
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.73.656