Abstract
The current transport mechanism in permalloy/n-type Ge Schottky diodes was studied over the temperature range from 200 to 400 K. At temperatures above 250 K, the forward current-voltage (I-V) characteristics of the diode were ideal and obeyed the thermionic emission theory. Below 250 K, however, the recombination process was found to contribute to current transport. Similarly, in reverse bias, the thermionic emission mechanism appeared to dominate current transport at temperatures above 250 K, and the carrier generation mechanism dominated the reverse current below 250 K. A temperature-driven change in the current conduction mechanism from conduction dominated by low-barrier-height patches to conduction dominated by high-barrier-height regions suggests inhomogeneity in the Schottky barrier height. The barrier height inhomogeneity led to deviations in the Richardson constant from its theoretical value at lower temperatures. The room-temperature low-frequency noise measurements taken at different forward biases for the permalloy/n-type Ge Schottky diodes showed a 1/fγ dependence with a tight variation of γ between 1.20 and 1.31. The current dependence of the noise power spectral density exhibited a 1/f noise behavior, indicating the operation of the permalloy/n-type Ge Schottky diodes in the thermionic emission mode.
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I. Zutic, J. Fabian and S. D. Sarma, Rev. Mod. Phys. 76, 323 (2004).
K-R. Jeon, B-C. Min, Y-H. Jo, H-S. Lee, I-J. Shin, C-Y. Park, S-Y. Park and S-C. Shin, Phys. Rev. B 84, 165315 (2011).
A. Dimoulas, P. Tsipas, A. Sotiropoulos and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006).
A. V. Thathachary, K. N. Bhat, N. Bhat and M. S. Hegde, Appl. Phys. Lett. 96, 152108 (2010).
R. R. Lieten, S. Degroote, M. Kuijk and G. Borghs, Appl. Phys. Lett. 92, 022106 (2008).
V. Janardhanam, H-J. Yun, J. Lee, V. R. Reddy, H. Hong, K-S. Ahn and C-J. Choi, Scripta Mater. 69, 809 (2013).
E. S. Liu, J. Nah, K. M. Varahramyan and E. Tutuc, Nano Lett. 10, 3297 (2010).
Y. Zhou, W. Han, L. T. Chang, F. Xiu, M. Wang, M. Oehme, I. Fischer, J. Schulze, R. Kawakami and K. Wang, Phys. Rev. B 84, 1 (2011).
H. Saito, S. Watanabe, Y. Mineno, S. Sharma, R. Jansen, S. Yuasa and K. Ando, Solid State Commun. 151, 1159 (2011).
A. Jain, L. Louahadj, J. Peiro, J. C. Le Breton, C. Vergnaud, A. Barski, C. Beigne, L. Notin, A. Marty, V. Baltz, S. Auffret, E. Augendre, H. Jaffres, J. M. George and M. Jamet, Appl. Phys. Lett. 99, 162102 (2011).
A. Sellai, A. Mesli, M. Petit, V. L. Thanh, D. Taylor and M. Henini, Semicond. Sci. Technol. 27, 035014 (2012).
M. Petit, R. Hayakawa, Y. Wakayama, V. L. Tanh and L. Michez, J. Phys. D: Appl. Phys. 49, 355101 (2016).
D. Lee, S. Raghunathan, R. J. Wilson, D. E. Nikonov, K. Saraswat and S. X. Wang, Appl. Phys. Lett. 96, 052514 (2010).
M. Ziese, Spin transport in Semiconductors, in Spin Electronics, edited by M. Ziese and M. J. Thornton (Springer-Verlag, Berlin-Heidelberg, 2001), p. 396.
S. Gardelis, C. G. Smith, C. H. Barnes, E. H. Linfield and D. A. Ritchie, Phys. Rev. B 60, 7764 (1999).
W. Wang, Y. Liu, L. Tang, Y. Jin, T. Zhao and F. Xiu, Sci. Rep. 4, 06928 (2014).
E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon Press, Oxford, 1988).
V. Janardhanam, I. Jyothi, K. S. Ahn and C. J. Choi, Thin Solid Films 546, 63 (2013).
H-W. Hubers and H. P. Roser, J. Appl. Phys. 84, 5326 (1998).
M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata and S. Yamakoshi, Appl. Phys. Lett. 108, 133503 (2016).
D. K. Schroder, Semiconductor Material and Device Characterization, third ed. (John Wiley & Sons, Inc. Publication, New Jersey, 2006).
M. Wittmer, Phys. Rev. B 43, 4385 (1991).
J. M. Arroyo, J. Appl. Phys. 120, 164508 (2016).
V. Janardhanam, Y-K. Park, H-J. Yun, K-S. Ahn and C-J. Choi, IEEE Electron. Dev. Lett. 33, 949 (2012).
V. Aubry and F. Meyer, J. Appl. Phys. 76, 7973 (1994).
C. Lu and S. N. Mohammad, Appl. Phys. Lett. 89, 162111 (2006).
Y. Zhou, D. Wang, C. Ahyi, C. C. Tin, J. Williams, M. Park, N. M. Williams, A. Hanser and E. A. Preble, J. Appl. Phys. 101, 024506 (2007).
R. T. Tung, Phys. Rev. B 45, 13509 (1992).
T. G. M. Kleinpenning, Solid-State Electron. 22, 121 (1979).
Y. An, H. Rao, G. Bosman and A. Ural, J. Vac. Sci. Technol. B 30, 021805 (2012).
E. I. Shabunina, M. E. Levinshtein, N. M. Shmidt, P. A. Ivanov and J. W. Palmour, Solid-State Electron. 96, 44 (2014).
M. Y. Luo, G. Bosman, A. V. D. Ziel and L. L. Hench, IEEE Trans. Electron Devices 35, 1351 (1988).
Z. Khurelbaatar, Y-H. Kil, K-H. Shim, H. Cho, M-J. Kim, S-N. Lee, J-C. Jeong, H. Hong and C-J. Choi, Superlattice Microstruc. 91, 306 (2016).
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Janardhanam, V., Jyothi, I., Yuk, SH. et al. Current Transport and 1/f Noise Characteristics in Ferromagnetic Permalloy/n-type Ge Schottky Contacts. J. Korean Phys. Soc. 73, 605–611 (2018). https://doi.org/10.3938/jkps.73.605
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DOI: https://doi.org/10.3938/jkps.73.605